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High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

Chen Z, Zhang F, Chen B, Zheng Y, Gao B, Liu L, Liu X, Kang J - Nanoscale Res Lett (2015)

Bottom Line: Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays.In addition, multi-level data storage capability and robust reliability characteristics were also presented.The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.

ABSTRACT
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

No MeSH data available.


Typical DC current–voltage curve. Measured DC I-V characteristics of the HfOx/AlOy-based RRAM device for 100 consecutive cycles. Good cycle-to-cycle uniformity can be observed.
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Fig3: Typical DC current–voltage curve. Measured DC I-V characteristics of the HfOx/AlOy-based RRAM device for 100 consecutive cycles. Good cycle-to-cycle uniformity can be observed.

Mentions: A typical DC I-V curve is shown in Figure 3. During SET/RESET operation, bias voltage was applied to the top electrode from 0 to +2/−2 V and then swept back to 0 V, while the bottom electrode was kept grounded. The devices show typical bipolar resistive switching behaviors, with the 1st/50th/100th DC I-V characteristics shown in the figure. The good consistency between the 1st, 50th, and 100th cycles reveals excellent switching cycle uniformity of the RRAM device. Moreover, both switching voltages and HRS/low-resistance state (LRS) distributions were obtained from 100 consecutive DC sweep cycles as shown in Figure 4a,b, respectively. In DC sweep mode, Vset means the voltage at which the current abruptly increases to the compliance current during the set process, and Vreset refers to the voltage at which the current begins decreasing during the reset process. The good cycle-to-cycle uniformity may be attributed to the interfacial effect of the HfOx/AlOy layer [25]. The additional buffer oxide layer of AlOy has a larger oxygen ion migration barrier (Em) and can confine the switching in the active oxide. Among the measured 150 uniformly distributed cells having one 24 × 24 array, only seven RRAM devices cannot switch, which shows the high yield (>95%) of the cross-point array.Figure 3


High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

Chen Z, Zhang F, Chen B, Zheng Y, Gao B, Liu L, Liu X, Kang J - Nanoscale Res Lett (2015)

Typical DC current–voltage curve. Measured DC I-V characteristics of the HfOx/AlOy-based RRAM device for 100 consecutive cycles. Good cycle-to-cycle uniformity can be observed.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385114&req=5

Fig3: Typical DC current–voltage curve. Measured DC I-V characteristics of the HfOx/AlOy-based RRAM device for 100 consecutive cycles. Good cycle-to-cycle uniformity can be observed.
Mentions: A typical DC I-V curve is shown in Figure 3. During SET/RESET operation, bias voltage was applied to the top electrode from 0 to +2/−2 V and then swept back to 0 V, while the bottom electrode was kept grounded. The devices show typical bipolar resistive switching behaviors, with the 1st/50th/100th DC I-V characteristics shown in the figure. The good consistency between the 1st, 50th, and 100th cycles reveals excellent switching cycle uniformity of the RRAM device. Moreover, both switching voltages and HRS/low-resistance state (LRS) distributions were obtained from 100 consecutive DC sweep cycles as shown in Figure 4a,b, respectively. In DC sweep mode, Vset means the voltage at which the current abruptly increases to the compliance current during the set process, and Vreset refers to the voltage at which the current begins decreasing during the reset process. The good cycle-to-cycle uniformity may be attributed to the interfacial effect of the HfOx/AlOy layer [25]. The additional buffer oxide layer of AlOy has a larger oxygen ion migration barrier (Em) and can confine the switching in the active oxide. Among the measured 150 uniformly distributed cells having one 24 × 24 array, only seven RRAM devices cannot switch, which shows the high yield (>95%) of the cross-point array.Figure 3

Bottom Line: Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays.In addition, multi-level data storage capability and robust reliability characteristics were also presented.The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.

ABSTRACT
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

No MeSH data available.