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High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

Chen Z, Zhang F, Chen B, Zheng Y, Gao B, Liu L, Liu X, Kang J - Nanoscale Res Lett (2015)

Bottom Line: Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays.In addition, multi-level data storage capability and robust reliability characteristics were also presented.The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.

ABSTRACT
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

No MeSH data available.


Related in: MedlinePlus

Current–voltage curves of the two-step forming process. The blue line is the first step, corresponding to the soft breakdown of the AlOy layer, and the red line is the second step, referring to the soft breakdown of the HfOx layer.
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Fig2: Current–voltage curves of the two-step forming process. The blue line is the first step, corresponding to the soft breakdown of the AlOy layer, and the red line is the second step, referring to the soft breakdown of the HfOx layer.

Mentions: The resistance values of the fresh devices were usually higher than that of the high-resistance state (HRS) after a RESET process. A two-step forming process was required to activate the RRAM devices and achieve stable resistive switching behaviors. The current–voltage (I-V) curve of the forming process using voltage sweeping is shown in Figure 2. This two-step forming behavior can be attributed to the inhomogeneous distribution of the electric field in HfOx/AlOy layers, which corresponds to the breakdown of HfOx and AlOy layers, respectively. The TE, resistive switching layer, and BE comprise a metal-insulator-metal (MIM) structure, which can be regarded as a plate capacitor with two kinds of dielectrics. According to Gauss’s law, when a voltage is applied across the TE and BE, the electric field intensity in the HfOx layer and AlOy layer can be obtained by the following equations:Figure 2


High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

Chen Z, Zhang F, Chen B, Zheng Y, Gao B, Liu L, Liu X, Kang J - Nanoscale Res Lett (2015)

Current–voltage curves of the two-step forming process. The blue line is the first step, corresponding to the soft breakdown of the AlOy layer, and the red line is the second step, referring to the soft breakdown of the HfOx layer.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385114&req=5

Fig2: Current–voltage curves of the two-step forming process. The blue line is the first step, corresponding to the soft breakdown of the AlOy layer, and the red line is the second step, referring to the soft breakdown of the HfOx layer.
Mentions: The resistance values of the fresh devices were usually higher than that of the high-resistance state (HRS) after a RESET process. A two-step forming process was required to activate the RRAM devices and achieve stable resistive switching behaviors. The current–voltage (I-V) curve of the forming process using voltage sweeping is shown in Figure 2. This two-step forming behavior can be attributed to the inhomogeneous distribution of the electric field in HfOx/AlOy layers, which corresponds to the breakdown of HfOx and AlOy layers, respectively. The TE, resistive switching layer, and BE comprise a metal-insulator-metal (MIM) structure, which can be regarded as a plate capacitor with two kinds of dielectrics. According to Gauss’s law, when a voltage is applied across the TE and BE, the electric field intensity in the HfOx layer and AlOy layer can be obtained by the following equations:Figure 2

Bottom Line: Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays.In addition, multi-level data storage capability and robust reliability characteristics were also presented.The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.

ABSTRACT
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

No MeSH data available.


Related in: MedlinePlus