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High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

Chen Z, Zhang F, Chen B, Zheng Y, Gao B, Liu L, Liu X, Kang J - Nanoscale Res Lett (2015)

Bottom Line: Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays.In addition, multi-level data storage capability and robust reliability characteristics were also presented.The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.

ABSTRACT
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

No MeSH data available.


Process flow of the fabrication of HfOx/AlOy-based cross-point RRAM array.
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Fig1: Process flow of the fabrication of HfOx/AlOy-based cross-point RRAM array.

Mentions: The fabrication flow of the HfOx/AlOy-based cross-point RRAM array is schematically shown in Figure 1. Firstly, both the 20-nm Ti adhesion layer and 100-nm Pt bottom electrode (BE) layers were deposited on a SiO2/Si substrate by physical vapor deposition (PVD). Then, the Pt bottom electrode bars were formed by photolithography and lift-off. After that, the 20-nm SiO2 film was deposited by plasma-enhanced chemical vapor deposition (PECVD) to serve as the isolation layer. Different sizes of via holes through the SiO2 isolation layer from 1 × 1 μm2 to 10 × 10 μm2 were formed by reactive ion etching (RIE). Then, 3-nm AlOy and 5-nm HfOx layers were deposited by ALD (Picosun, Masala, Finland) at 300°C, using H2O and trimethylaluminum (TMA)/tetrakis[ethylmethylamino]hafnium (TEMAH) as precursors, followed by a furnace annealing in O2 ambient at 500°C for 30 min. After the 40-nm TiN was sputtered and patterned by photolithography and dry etching to define the top electrode (TE) bars, the contact holes to the pad of the bottom electrode Pt were formed by dry etching. The fabricated array size is 24 × 24, with cross-bar width of 10 μm and pitch along the x and y directions of 20 μm. The pad area of the electrodes is 100 × 100 μm2.Figure 1


High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

Chen Z, Zhang F, Chen B, Zheng Y, Gao B, Liu L, Liu X, Kang J - Nanoscale Res Lett (2015)

Process flow of the fabrication of HfOx/AlOy-based cross-point RRAM array.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385114&req=5

Fig1: Process flow of the fabrication of HfOx/AlOy-based cross-point RRAM array.
Mentions: The fabrication flow of the HfOx/AlOy-based cross-point RRAM array is schematically shown in Figure 1. Firstly, both the 20-nm Ti adhesion layer and 100-nm Pt bottom electrode (BE) layers were deposited on a SiO2/Si substrate by physical vapor deposition (PVD). Then, the Pt bottom electrode bars were formed by photolithography and lift-off. After that, the 20-nm SiO2 film was deposited by plasma-enhanced chemical vapor deposition (PECVD) to serve as the isolation layer. Different sizes of via holes through the SiO2 isolation layer from 1 × 1 μm2 to 10 × 10 μm2 were formed by reactive ion etching (RIE). Then, 3-nm AlOy and 5-nm HfOx layers were deposited by ALD (Picosun, Masala, Finland) at 300°C, using H2O and trimethylaluminum (TMA)/tetrakis[ethylmethylamino]hafnium (TEMAH) as precursors, followed by a furnace annealing in O2 ambient at 500°C for 30 min. After the 40-nm TiN was sputtered and patterned by photolithography and dry etching to define the top electrode (TE) bars, the contact holes to the pad of the bottom electrode Pt were formed by dry etching. The fabricated array size is 24 × 24, with cross-bar width of 10 μm and pitch along the x and y directions of 20 μm. The pad area of the electrodes is 100 × 100 μm2.Figure 1

Bottom Line: Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays.In addition, multi-level data storage capability and robust reliability characteristics were also presented.The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

View Article: PubMed Central - PubMed

Affiliation: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.

ABSTRACT
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

No MeSH data available.