Limits...
Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3.

Zhang G, Wu H, Chen C, Wang T, Yue J, Liu C - Nanoscale Res Lett (2015)

Bottom Line: A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3.Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized.The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.

ABSTRACT
Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

No MeSH data available.


Related in: MedlinePlus

I-V characteristics and bending test of the capacitor device. (a)I-V characteristics of the capacitor device without bending from −4 to 4 V and bending test of the capacitor device in concave (b) and convex (c) conditions.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4385106&req=5

Fig4: I-V characteristics and bending test of the capacitor device. (a)I-V characteristics of the capacitor device without bending from −4 to 4 V and bending test of the capacitor device in concave (b) and convex (c) conditions.

Mentions: Figure 3a shows the C-V characteristics of ATA capacitors measured at 10 KHz. The capacitance density reached 7.8 fF/μm2 at 0 V, corresponding to a dielectric constant of 26.3. Figure 3b demonstrates the C-F characteristics of the capacitor device at frequencies from 1 KHz to 10 MHz when the direct voltage was fixed at 0 V. The capacitance density keeps almost constant from 1 to 300 KHz. The little dielectric loss at low frequencies can be attributed to the relatively low leakage current density which is 3.9 × 10−8 A/cm2 at 1 V, as shown in Figure 4a. However, the capacitance density dropped significantly when the frequency was above 300 KHz. The dielectric loss happened at high frequencies mainly because of the relatively high sheet resistance of AZO films (about 70 Ω). Hence, the flexible capacitor device can work steadily at frequencies between 1 and 300 KHz.Figure 3


Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3.

Zhang G, Wu H, Chen C, Wang T, Yue J, Liu C - Nanoscale Res Lett (2015)

I-V characteristics and bending test of the capacitor device. (a)I-V characteristics of the capacitor device without bending from −4 to 4 V and bending test of the capacitor device in concave (b) and convex (c) conditions.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385106&req=5

Fig4: I-V characteristics and bending test of the capacitor device. (a)I-V characteristics of the capacitor device without bending from −4 to 4 V and bending test of the capacitor device in concave (b) and convex (c) conditions.
Mentions: Figure 3a shows the C-V characteristics of ATA capacitors measured at 10 KHz. The capacitance density reached 7.8 fF/μm2 at 0 V, corresponding to a dielectric constant of 26.3. Figure 3b demonstrates the C-F characteristics of the capacitor device at frequencies from 1 KHz to 10 MHz when the direct voltage was fixed at 0 V. The capacitance density keeps almost constant from 1 to 300 KHz. The little dielectric loss at low frequencies can be attributed to the relatively low leakage current density which is 3.9 × 10−8 A/cm2 at 1 V, as shown in Figure 4a. However, the capacitance density dropped significantly when the frequency was above 300 KHz. The dielectric loss happened at high frequencies mainly because of the relatively high sheet resistance of AZO films (about 70 Ω). Hence, the flexible capacitor device can work steadily at frequencies between 1 and 300 KHz.Figure 3

Bottom Line: A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3.Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized.The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.

ABSTRACT
Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

No MeSH data available.


Related in: MedlinePlus