Limits...
Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3.

Zhang G, Wu H, Chen C, Wang T, Yue J, Liu C - Nanoscale Res Lett (2015)

Bottom Line: A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3.Bending test shows that the capacitors have better performances in concave conditions than in convex conditions.The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.

ABSTRACT
Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

No MeSH data available.


Related in: MedlinePlus

AFM images of the ITO/PEN surface (a) and ATA dielectrics surface (b).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4385106&req=5

Fig2: AFM images of the ITO/PEN surface (a) and ATA dielectrics surface (b).

Mentions: Figure 2a shows the 5 × 5 μm2 atomic force microcopy images of the ITO/PEN surface. The root mean square (RMS) value of the surface roughness was about 4.7 nm. The relatively big surface roughness resulted from the high-density ITO crystalline grains which are small white particles shown in Figure 2a. After deposition of ATA thin films, the RMS value was slightly reduced to 4.6 nm and the small crystalline grains were increased slightly in size, as shown in Figure 2b. This suggests that uniform coatings of ATA films have been realized on the ITO bottom electrode.Figure 2


Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3.

Zhang G, Wu H, Chen C, Wang T, Yue J, Liu C - Nanoscale Res Lett (2015)

AFM images of the ITO/PEN surface (a) and ATA dielectrics surface (b).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385106&req=5

Fig2: AFM images of the ITO/PEN surface (a) and ATA dielectrics surface (b).
Mentions: Figure 2a shows the 5 × 5 μm2 atomic force microcopy images of the ITO/PEN surface. The root mean square (RMS) value of the surface roughness was about 4.7 nm. The relatively big surface roughness resulted from the high-density ITO crystalline grains which are small white particles shown in Figure 2a. After deposition of ATA thin films, the RMS value was slightly reduced to 4.6 nm and the small crystalline grains were increased slightly in size, as shown in Figure 2b. This suggests that uniform coatings of ATA films have been realized on the ITO bottom electrode.Figure 2

Bottom Line: A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3.Bending test shows that the capacitors have better performances in concave conditions than in convex conditions.The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

View Article: PubMed Central - PubMed

Affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.

ABSTRACT
Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

No MeSH data available.


Related in: MedlinePlus