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Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.

Zhang X, Chen L, Sun QQ, Wang LH, Zhou P, Lu HL, Wang PF, Ding SJ, Zhang DW - Nanoscale Res Lett (2015)

Bottom Line: Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection.In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz.Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China.

ABSTRACT
Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition were investigated. Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection. In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz. Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

No MeSH data available.


Related in: MedlinePlus

Variations in the domain switching current andPr. (a) Variations in the domain switching current as a function of the peak voltage and test time. (b) Variations in the Pr as a function of the peak voltage.
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Fig5: Variations in the domain switching current andPr. (a) Variations in the domain switching current as a function of the peak voltage and test time. (b) Variations in the Pr as a function of the peak voltage.

Mentions: With the influence of external electric field, spontaneous polarization will alter its orientation, inducing the domain switching current (Figure 5). The peaks of current slightly increase, and the values of time to reach the peak gradually decrease with the increasing of electric field strength during the test, suggesting the higher speed of domain wall inversion. Combining with Figure 5b, it is clear that a high Pr gives rise to a high polarization reversal current. Through the test results, although the one structure presents the best ferroelectric hysteresis loop, its switching current has risen up to about 80 mA in the 12-V test voltage. Considering the electrode area of only 1.1 × 10−3 cm2, the severe phenomenon of leakage is clear, which needs improvements.Figure 5


Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.

Zhang X, Chen L, Sun QQ, Wang LH, Zhou P, Lu HL, Wang PF, Ding SJ, Zhang DW - Nanoscale Res Lett (2015)

Variations in the domain switching current andPr. (a) Variations in the domain switching current as a function of the peak voltage and test time. (b) Variations in the Pr as a function of the peak voltage.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385058&req=5

Fig5: Variations in the domain switching current andPr. (a) Variations in the domain switching current as a function of the peak voltage and test time. (b) Variations in the Pr as a function of the peak voltage.
Mentions: With the influence of external electric field, spontaneous polarization will alter its orientation, inducing the domain switching current (Figure 5). The peaks of current slightly increase, and the values of time to reach the peak gradually decrease with the increasing of electric field strength during the test, suggesting the higher speed of domain wall inversion. Combining with Figure 5b, it is clear that a high Pr gives rise to a high polarization reversal current. Through the test results, although the one structure presents the best ferroelectric hysteresis loop, its switching current has risen up to about 80 mA in the 12-V test voltage. Considering the electrode area of only 1.1 × 10−3 cm2, the severe phenomenon of leakage is clear, which needs improvements.Figure 5

Bottom Line: Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection.In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz.Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China.

ABSTRACT
Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition were investigated. Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection. In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz. Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

No MeSH data available.


Related in: MedlinePlus