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Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.

Zhang X, Chen L, Sun QQ, Wang LH, Zhou P, Lu HL, Wang PF, Ding SJ, Zhang DW - Nanoscale Res Lett (2015)

Bottom Line: Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection.In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz.Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

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Affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China.

ABSTRACT
Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition were investigated. Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection. In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz. Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

No MeSH data available.


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Variations in thePrwith (a) the number of work cycles, (b) retention time.
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Fig4: Variations in thePrwith (a) the number of work cycles, (b) retention time.

Mentions: For practical application in the field of ferroelectric field effect transistor (FeFET) or nonvolatile ferroelectric memories (FeRAM), HfO2-based ferroelectric thin films should achieve superior performance on endurance cycling and data retention. Figure 4 shows the change of Pr of the MIM capacitor with a 25-nm-thick thin film and Ni top electrode in capped crystallization as a function of the number of work cycles and retention time, respectively.Figure 4


Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.

Zhang X, Chen L, Sun QQ, Wang LH, Zhou P, Lu HL, Wang PF, Ding SJ, Zhang DW - Nanoscale Res Lett (2015)

Variations in thePrwith (a) the number of work cycles, (b) retention time.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385058&req=5

Fig4: Variations in thePrwith (a) the number of work cycles, (b) retention time.
Mentions: For practical application in the field of ferroelectric field effect transistor (FeFET) or nonvolatile ferroelectric memories (FeRAM), HfO2-based ferroelectric thin films should achieve superior performance on endurance cycling and data retention. Figure 4 shows the change of Pr of the MIM capacitor with a 25-nm-thick thin film and Ni top electrode in capped crystallization as a function of the number of work cycles and retention time, respectively.Figure 4

Bottom Line: Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection.In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz.Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China.

ABSTRACT
Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition were investigated. Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection. In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz. Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

No MeSH data available.


Related in: MedlinePlus