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Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.

Zhang X, Chen L, Sun QQ, Wang LH, Zhou P, Lu HL, Wang PF, Ding SJ, Zhang DW - Nanoscale Res Lett (2015)

Bottom Line: Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection.In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz.Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China.

ABSTRACT
Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition were investigated. Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection. In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz. Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

No MeSH data available.


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The XRD spectra with Ru or Si as bottom electrode inθ-2θmode. Both of the samples have capped structure and Ni as the top electrode.
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Fig3: The XRD spectra with Ru or Si as bottom electrode inθ-2θmode. Both of the samples have capped structure and Ni as the top electrode.

Mentions: The choice of bottom electrode can affect the structure of the deposited ferroelectric thin film and its performance [9]. Figure 3 shows the contribution of the inductive crystallization effect of the Si/SiO2/TiN/Ru bottom electrode by XRD spectra, compared with a sample on Si-sub. Both of them have a capped structure. The reference powder pattern of the HfxZr1-xO2 system for the orthorhombic phase with space group Pbc21 [1,10] is calculated from the literature, whose estimated lattice parameters are 5.26 Å (a), 5.07 Å (b), and 5.08 Å (c).Figure 3


Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.

Zhang X, Chen L, Sun QQ, Wang LH, Zhou P, Lu HL, Wang PF, Ding SJ, Zhang DW - Nanoscale Res Lett (2015)

The XRD spectra with Ru or Si as bottom electrode inθ-2θmode. Both of the samples have capped structure and Ni as the top electrode.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385058&req=5

Fig3: The XRD spectra with Ru or Si as bottom electrode inθ-2θmode. Both of the samples have capped structure and Ni as the top electrode.
Mentions: The choice of bottom electrode can affect the structure of the deposited ferroelectric thin film and its performance [9]. Figure 3 shows the contribution of the inductive crystallization effect of the Si/SiO2/TiN/Ru bottom electrode by XRD spectra, compared with a sample on Si-sub. Both of them have a capped structure. The reference powder pattern of the HfxZr1-xO2 system for the orthorhombic phase with space group Pbc21 [1,10] is calculated from the literature, whose estimated lattice parameters are 5.26 Å (a), 5.07 Å (b), and 5.08 Å (c).Figure 3

Bottom Line: Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection.In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz.Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China.

ABSTRACT
Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition were investigated. Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection. In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz. Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

No MeSH data available.


Related in: MedlinePlus