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Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.

Zhang X, Chen L, Sun QQ, Wang LH, Zhou P, Lu HL, Wang PF, Ding SJ, Zhang DW - Nanoscale Res Lett (2015)

Bottom Line: Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection.In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz.Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China.

ABSTRACT
Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition were investigated. Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection. In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz. Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

No MeSH data available.


A TEM cross section of the MIM capacitor with a 25-nm-thick Hf0.5Zr0.5O2thin film.
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Fig1: A TEM cross section of the MIM capacitor with a 25-nm-thick Hf0.5Zr0.5O2thin film.

Mentions: A TEM cross section of the MIM capacitor with a 25-nm-thick Hf0.5Zr0.5O2 thin film is shown in Figure 1. The Ni top electrode is formed at room temperature, followed by RTP at 823 K for 30 s in N2 ambient to crystallize the as-deposited amorphous Hf0.5Zr0.5O2 thin films, which enables CMOS-compatible device processing and also offers BEOL compatibility, compared with high heat budget of the SiO2-doped HfO2 system [1].Figure 1


Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.

Zhang X, Chen L, Sun QQ, Wang LH, Zhou P, Lu HL, Wang PF, Ding SJ, Zhang DW - Nanoscale Res Lett (2015)

A TEM cross section of the MIM capacitor with a 25-nm-thick Hf0.5Zr0.5O2thin film.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385058&req=5

Fig1: A TEM cross section of the MIM capacitor with a 25-nm-thick Hf0.5Zr0.5O2thin film.
Mentions: A TEM cross section of the MIM capacitor with a 25-nm-thick Hf0.5Zr0.5O2 thin film is shown in Figure 1. The Ni top electrode is formed at room temperature, followed by RTP at 823 K for 30 s in N2 ambient to crystallize the as-deposited amorphous Hf0.5Zr0.5O2 thin films, which enables CMOS-compatible device processing and also offers BEOL compatibility, compared with high heat budget of the SiO2-doped HfO2 system [1].Figure 1

Bottom Line: Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection.In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz.Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China.

ABSTRACT
Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition were investigated. Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection. In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz. Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

No MeSH data available.