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Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy.

Lin SW, Wu YH, Chang L, Liang CT, Lin SD - Nanoscale Res Lett (2015)

Bottom Line: We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy.This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy.The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010 Taiwan.

ABSTRACT
We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

No MeSH data available.


Related in: MedlinePlus

Temperature-dependent dephasing rate and interaction strength. (a) Temperature-dependent dephasing rate (1/τi) (symbol) of the Al sample. The horizontal solid line represents the level of spin-orbit interaction rate (1/τso) and the dashed line represents the theoretic Nyquist scattering rate (1/τN). (b) Temperature dependence of the interaction strength β.
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Fig4: Temperature-dependent dephasing rate and interaction strength. (a) Temperature-dependent dephasing rate (1/τi) (symbol) of the Al sample. The horizontal solid line represents the level of spin-orbit interaction rate (1/τso) and the dashed line represents the theoretic Nyquist scattering rate (1/τN). (b) Temperature dependence of the interaction strength β.

Mentions: With the fitted Bi and Bso, the inelastic scattering time τi and spin-orbit scattering time τso can be derived by τi = h/(8πeDBi) and τso = h/(8πeDBso), as well as the phase coherent length li and spin-orbit interaction length lso by li = (h/8πeBi)1/2 and lso = (h/8πeBso)1/2. We used Al bulk concentration nAl = 1.81 × 1029 (m−3) to estimate the Fermi velocity (vF = 2.03 × 106 m/s) and Fermi wavelength (λF = 0.36 nm) for our sample. Figure 4a shows the extracted parameter 1/τi as a function of temperature. The solid horizontal line indicates the level of spin orbit interaction rate 1/τso, and the dashed line represents the theoretic calculation of electron-electron scattering (Nyquist scattering) rate based on the work of Altshuler et al. [24]:4\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ {\tau_{\mathrm{N}}}^{-1}=\frac{e^2{R}_{\mathrm{s}}}{2\pi {\hslash}^2}{k}_{\mathrm{B}}T \ln \left(\frac{\pi \hslash }{e^2{R}_{\mathrm{s}}}\right). $$\end{document}τN−1=e2Rs2πℏ2kBTlnπℏe2Rs.Figure 4


Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy.

Lin SW, Wu YH, Chang L, Liang CT, Lin SD - Nanoscale Res Lett (2015)

Temperature-dependent dephasing rate and interaction strength. (a) Temperature-dependent dephasing rate (1/τi) (symbol) of the Al sample. The horizontal solid line represents the level of spin-orbit interaction rate (1/τso) and the dashed line represents the theoretic Nyquist scattering rate (1/τN). (b) Temperature dependence of the interaction strength β.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
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getmorefigures.php?uid=PMC4385055&req=5

Fig4: Temperature-dependent dephasing rate and interaction strength. (a) Temperature-dependent dephasing rate (1/τi) (symbol) of the Al sample. The horizontal solid line represents the level of spin-orbit interaction rate (1/τso) and the dashed line represents the theoretic Nyquist scattering rate (1/τN). (b) Temperature dependence of the interaction strength β.
Mentions: With the fitted Bi and Bso, the inelastic scattering time τi and spin-orbit scattering time τso can be derived by τi = h/(8πeDBi) and τso = h/(8πeDBso), as well as the phase coherent length li and spin-orbit interaction length lso by li = (h/8πeBi)1/2 and lso = (h/8πeBso)1/2. We used Al bulk concentration nAl = 1.81 × 1029 (m−3) to estimate the Fermi velocity (vF = 2.03 × 106 m/s) and Fermi wavelength (λF = 0.36 nm) for our sample. Figure 4a shows the extracted parameter 1/τi as a function of temperature. The solid horizontal line indicates the level of spin orbit interaction rate 1/τso, and the dashed line represents the theoretic calculation of electron-electron scattering (Nyquist scattering) rate based on the work of Altshuler et al. [24]:4\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ {\tau_{\mathrm{N}}}^{-1}=\frac{e^2{R}_{\mathrm{s}}}{2\pi {\hslash}^2}{k}_{\mathrm{B}}T \ln \left(\frac{\pi \hslash }{e^2{R}_{\mathrm{s}}}\right). $$\end{document}τN−1=e2Rs2πℏ2kBTlnπℏe2Rs.Figure 4

Bottom Line: We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy.This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy.The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010 Taiwan.

ABSTRACT
We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

No MeSH data available.


Related in: MedlinePlus