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Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy.

Lin SW, Wu YH, Chang L, Liang CT, Lin SD - Nanoscale Res Lett (2015)

Bottom Line: We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy.This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy.The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010 Taiwan.

ABSTRACT
We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

No MeSH data available.


Related in: MedlinePlus

Measured and calculated sheet resistance. Measured (symbols) and calculated (solid lines) sheet resistance as a function of magnetic field of the Al film at 1.639, 2.248, and 4.650 K.
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Fig3: Measured and calculated sheet resistance. Measured (symbols) and calculated (solid lines) sheet resistance as a function of magnetic field of the Al film at 1.639, 2.248, and 4.650 K.

Mentions: We have measured the sheet resistance Rs of our sample in the temperature range of 1.4 to 10 K. At temperatures higher than 10 K, the signals became noisy and WAL is barely observable. We noted that the Hall resistance RH is small compared to Rs and remained unchanged even increasing the magnetic field to 1 T. Thus, we neglected the effect of RH in all the calculation and theoretical fitting. In Figure 3, the measured Rs is plotted against the applied magnetic field at various temperatures, together with the fit to the theoretical model. Around zero magnetic field, clear WAL in our Al film occurs as Rs increases with increasing magnetic fields. In addition, Rs decreases dramatically when the temperature goes below 4.5 K, indicating that the superconducting fluctuation plays an important role here. Therefore, when fitting our data to the theoretical model, we have considered the WAL theory stated in Equation 1 with the first Maki-Thompson term in Equation 2. The later term of Equation 2 vanishes because BT is always much larger than Bi and Bso. The contribution of this term is much less. So, the used fitting formula is given by:3\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ \Delta g=\frac{e^2}{\pi h}\left[\frac{3}{2}Y\left(\frac{B_2}{B}\right)-\frac{1}{2}Y\left(\frac{B_i}{B}\right)-\beta Y\left(\frac{B_i}{B}\right)\right]. $$\end{document}Δg=e2πh32YB2B−12YBiB−βYBiB.Figure 3


Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy.

Lin SW, Wu YH, Chang L, Liang CT, Lin SD - Nanoscale Res Lett (2015)

Measured and calculated sheet resistance. Measured (symbols) and calculated (solid lines) sheet resistance as a function of magnetic field of the Al film at 1.639, 2.248, and 4.650 K.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385055&req=5

Fig3: Measured and calculated sheet resistance. Measured (symbols) and calculated (solid lines) sheet resistance as a function of magnetic field of the Al film at 1.639, 2.248, and 4.650 K.
Mentions: We have measured the sheet resistance Rs of our sample in the temperature range of 1.4 to 10 K. At temperatures higher than 10 K, the signals became noisy and WAL is barely observable. We noted that the Hall resistance RH is small compared to Rs and remained unchanged even increasing the magnetic field to 1 T. Thus, we neglected the effect of RH in all the calculation and theoretical fitting. In Figure 3, the measured Rs is plotted against the applied magnetic field at various temperatures, together with the fit to the theoretical model. Around zero magnetic field, clear WAL in our Al film occurs as Rs increases with increasing magnetic fields. In addition, Rs decreases dramatically when the temperature goes below 4.5 K, indicating that the superconducting fluctuation plays an important role here. Therefore, when fitting our data to the theoretical model, we have considered the WAL theory stated in Equation 1 with the first Maki-Thompson term in Equation 2. The later term of Equation 2 vanishes because BT is always much larger than Bi and Bso. The contribution of this term is much less. So, the used fitting formula is given by:3\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ \Delta g=\frac{e^2}{\pi h}\left[\frac{3}{2}Y\left(\frac{B_2}{B}\right)-\frac{1}{2}Y\left(\frac{B_i}{B}\right)-\beta Y\left(\frac{B_i}{B}\right)\right]. $$\end{document}Δg=e2πh32YB2B−12YBiB−βYBiB.Figure 3

Bottom Line: We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy.This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy.The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

View Article: PubMed Central - PubMed

Affiliation: Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010 Taiwan.

ABSTRACT
We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

No MeSH data available.


Related in: MedlinePlus