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Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Wang G, Long S, Yu Z, Zhang M, Li Y, Xu D, Lv H, Liu Q, Yan X, Wang M, Xu X, Liu H, Yang B, Liu M - Nanoscale Res Lett (2015)

Bottom Line: Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation.In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved.Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

View Article: PubMed Central - PubMed

Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China ; Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin, 300384 China.

ABSTRACT
Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO2/Pt structure. In the DC voltage sweep of the RRAM device, the SET transition is abrupt under positive bias. If current sweep with positive bias is utilized in SET process, the SET switching will become gradual, so SET is current controlled. In the negative voltage sweep for RESET process, the change of current with applied voltage is gradual, so RESET is voltage controlled. Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation. Considering the SET/RESET characteristics in DC sweep, in the corresponding pulse operation, the width and height of the pulse series can be adjusted to control the SET and RESET process, respectively. Our new method is different from the traditional pulse operation in which both the width and height of program/erase pulse are simply kept constant which would lead to unnecessary damage to the device. In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved. Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

No MeSH data available.


Related in: MedlinePlus

The dependence of the resistance on the width/amplitude of P/E pulses. The resistance gradually decreases with time by the width-adjusting program pulse operation (a) and gradually increases with voltage through the height-adjusting erase pulse operation (b).
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Fig4: The dependence of the resistance on the width/amplitude of P/E pulses. The resistance gradually decreases with time by the width-adjusting program pulse operation (a) and gradually increases with voltage through the height-adjusting erase pulse operation (b).

Mentions: FigureĀ 4 reveals the gradual change of the resistance using the width-adjusting program pulse operation and the height-adjusting erase pulse operation. The resistance gradually increases with time by the novel width-adjusting program pulse operation and gradually decreases with voltage through the height-adjusting erase pulse operation. Similar to the resistance adjusting by DC sweep method [22-25], our pulse operation methods can not only realize the gradual change of the resistances but can also be utilized to acquire multi-level storage of RRAM [26-29].Figure 4


Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Wang G, Long S, Yu Z, Zhang M, Li Y, Xu D, Lv H, Liu Q, Yan X, Wang M, Xu X, Liu H, Yang B, Liu M - Nanoscale Res Lett (2015)

The dependence of the resistance on the width/amplitude of P/E pulses. The resistance gradually decreases with time by the width-adjusting program pulse operation (a) and gradually increases with voltage through the height-adjusting erase pulse operation (b).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385037&req=5

Fig4: The dependence of the resistance on the width/amplitude of P/E pulses. The resistance gradually decreases with time by the width-adjusting program pulse operation (a) and gradually increases with voltage through the height-adjusting erase pulse operation (b).
Mentions: FigureĀ 4 reveals the gradual change of the resistance using the width-adjusting program pulse operation and the height-adjusting erase pulse operation. The resistance gradually increases with time by the novel width-adjusting program pulse operation and gradually decreases with voltage through the height-adjusting erase pulse operation. Similar to the resistance adjusting by DC sweep method [22-25], our pulse operation methods can not only realize the gradual change of the resistances but can also be utilized to acquire multi-level storage of RRAM [26-29].Figure 4

Bottom Line: Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation.In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved.Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

View Article: PubMed Central - PubMed

Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China ; Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin, 300384 China.

ABSTRACT
Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO2/Pt structure. In the DC voltage sweep of the RRAM device, the SET transition is abrupt under positive bias. If current sweep with positive bias is utilized in SET process, the SET switching will become gradual, so SET is current controlled. In the negative voltage sweep for RESET process, the change of current with applied voltage is gradual, so RESET is voltage controlled. Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation. Considering the SET/RESET characteristics in DC sweep, in the corresponding pulse operation, the width and height of the pulse series can be adjusted to control the SET and RESET process, respectively. Our new method is different from the traditional pulse operation in which both the width and height of program/erase pulse are simply kept constant which would lead to unnecessary damage to the device. In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved. Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

No MeSH data available.


Related in: MedlinePlus