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Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Wang G, Long S, Yu Z, Zhang M, Li Y, Xu D, Lv H, Liu Q, Yan X, Wang M, Xu X, Liu H, Yang B, Liu M - Nanoscale Res Lett (2015)

Bottom Line: Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation.In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved.Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

View Article: PubMed Central - PubMed

Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China ; Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin, 300384 China.

ABSTRACT
Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO2/Pt structure. In the DC voltage sweep of the RRAM device, the SET transition is abrupt under positive bias. If current sweep with positive bias is utilized in SET process, the SET switching will become gradual, so SET is current controlled. In the negative voltage sweep for RESET process, the change of current with applied voltage is gradual, so RESET is voltage controlled. Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation. Considering the SET/RESET characteristics in DC sweep, in the corresponding pulse operation, the width and height of the pulse series can be adjusted to control the SET and RESET process, respectively. Our new method is different from the traditional pulse operation in which both the width and height of program/erase pulse are simply kept constant which would lead to unnecessary damage to the device. In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved. Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

No MeSH data available.


Related in: MedlinePlus

The testing schematic of pulse operation method. (a) The test circuit of our new pulse operation method. Pulses with width or height increased by the automatic procedure are applied to finish the program or erase operation, respectively. (b) Schematic diagram of one complete erase process with height-adjusting pulse operation. (c) Schematic diagram of one complete program cycle of width-adjusting pulse operation. (d) A detailed flow chart of the program method.
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Fig3: The testing schematic of pulse operation method. (a) The test circuit of our new pulse operation method. Pulses with width or height increased by the automatic procedure are applied to finish the program or erase operation, respectively. (b) Schematic diagram of one complete erase process with height-adjusting pulse operation. (c) Schematic diagram of one complete program cycle of width-adjusting pulse operation. (d) A detailed flow chart of the program method.

Mentions: Considering the above SET/RESET characteristics in DC sweep, we use a new pulse operation to achieve the same effects. Figure 3a shows the test circuit of our new method. Pulses generated by PGU with width/height increased by an automatic procedure are applied on the RRAM device to finish the P/E operation. After each pulse, the connection is switched to 4200-SCS to carry out the DC read operation. Figure 3b,c shows in a more accurate way the schematic diagram of one complete erase process with height-adjusting pulse operation and one complete program process with width-adjusting pulse operation, respectively. Figure 3d provides the detailed flow chart of program test for our new pulse operation method. The width of the program pulses increases by around 1.1 times for each program-verify cycle. When the width exceeds the maximum pulse width tend, the procedure will be terminated. The flow chart of erase operation is similar to that of program test, and the height of erase pulse also increases about 1.1 times for each erase-verify cycle.Figure 3


Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Wang G, Long S, Yu Z, Zhang M, Li Y, Xu D, Lv H, Liu Q, Yan X, Wang M, Xu X, Liu H, Yang B, Liu M - Nanoscale Res Lett (2015)

The testing schematic of pulse operation method. (a) The test circuit of our new pulse operation method. Pulses with width or height increased by the automatic procedure are applied to finish the program or erase operation, respectively. (b) Schematic diagram of one complete erase process with height-adjusting pulse operation. (c) Schematic diagram of one complete program cycle of width-adjusting pulse operation. (d) A detailed flow chart of the program method.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385037&req=5

Fig3: The testing schematic of pulse operation method. (a) The test circuit of our new pulse operation method. Pulses with width or height increased by the automatic procedure are applied to finish the program or erase operation, respectively. (b) Schematic diagram of one complete erase process with height-adjusting pulse operation. (c) Schematic diagram of one complete program cycle of width-adjusting pulse operation. (d) A detailed flow chart of the program method.
Mentions: Considering the above SET/RESET characteristics in DC sweep, we use a new pulse operation to achieve the same effects. Figure 3a shows the test circuit of our new method. Pulses generated by PGU with width/height increased by an automatic procedure are applied on the RRAM device to finish the P/E operation. After each pulse, the connection is switched to 4200-SCS to carry out the DC read operation. Figure 3b,c shows in a more accurate way the schematic diagram of one complete erase process with height-adjusting pulse operation and one complete program process with width-adjusting pulse operation, respectively. Figure 3d provides the detailed flow chart of program test for our new pulse operation method. The width of the program pulses increases by around 1.1 times for each program-verify cycle. When the width exceeds the maximum pulse width tend, the procedure will be terminated. The flow chart of erase operation is similar to that of program test, and the height of erase pulse also increases about 1.1 times for each erase-verify cycle.Figure 3

Bottom Line: Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation.In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved.Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

View Article: PubMed Central - PubMed

Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China ; Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin, 300384 China.

ABSTRACT
Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO2/Pt structure. In the DC voltage sweep of the RRAM device, the SET transition is abrupt under positive bias. If current sweep with positive bias is utilized in SET process, the SET switching will become gradual, so SET is current controlled. In the negative voltage sweep for RESET process, the change of current with applied voltage is gradual, so RESET is voltage controlled. Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation. Considering the SET/RESET characteristics in DC sweep, in the corresponding pulse operation, the width and height of the pulse series can be adjusted to control the SET and RESET process, respectively. Our new method is different from the traditional pulse operation in which both the width and height of program/erase pulse are simply kept constant which would lead to unnecessary damage to the device. In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved. Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

No MeSH data available.


Related in: MedlinePlus