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Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Wang G, Long S, Yu Z, Zhang M, Li Y, Xu D, Lv H, Liu Q, Yan X, Wang M, Xu X, Liu H, Yang B, Liu M - Nanoscale Res Lett (2015)

Bottom Line: Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation.In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved.Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

View Article: PubMed Central - PubMed

Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China ; Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin, 300384 China.

ABSTRACT
Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO2/Pt structure. In the DC voltage sweep of the RRAM device, the SET transition is abrupt under positive bias. If current sweep with positive bias is utilized in SET process, the SET switching will become gradual, so SET is current controlled. In the negative voltage sweep for RESET process, the change of current with applied voltage is gradual, so RESET is voltage controlled. Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation. Considering the SET/RESET characteristics in DC sweep, in the corresponding pulse operation, the width and height of the pulse series can be adjusted to control the SET and RESET process, respectively. Our new method is different from the traditional pulse operation in which both the width and height of program/erase pulse are simply kept constant which would lead to unnecessary damage to the device. In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved. Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

No MeSH data available.


Related in: MedlinePlus

TypicalI-Vcurves and statistical distributions of Ti/HfO2/Pt RRAM device under different operation. (a) Positive voltage sweep SET and negative voltage sweep RESET processes. (b) Positive current sweep SET and negative current sweep RESET processes. (c) Positive voltage sweep SET and negative current sweep RESET processes. (d) Positive current sweep SET and negative voltage sweep RESET processes. (e-h) The cumulative distributions of Ron and Roff in 200 continuous cycles tested by the operation modes in (a-d), respectively. (i-l) The Weibull plots of the distributions of Ron and Roff in correspondence with (e-h), respectively. The straight lines are the lines fitting to standard Weibull distribution.
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Fig1: TypicalI-Vcurves and statistical distributions of Ti/HfO2/Pt RRAM device under different operation. (a) Positive voltage sweep SET and negative voltage sweep RESET processes. (b) Positive current sweep SET and negative current sweep RESET processes. (c) Positive voltage sweep SET and negative current sweep RESET processes. (d) Positive current sweep SET and negative voltage sweep RESET processes. (e-h) The cumulative distributions of Ron and Roff in 200 continuous cycles tested by the operation modes in (a-d), respectively. (i-l) The Weibull plots of the distributions of Ron and Roff in correspondence with (e-h), respectively. The straight lines are the lines fitting to standard Weibull distribution.

Mentions: Figure 1a-d shows the I-V curves under four types of DC sweep measurement of the Ti/HfO2/Pt VCM device. The device works in bipolar switching mode, i.e. SET occurs in positive polarity while RESET is in negative bias. In the DC voltage sweep (VS) of the RRAM device (Figure 1a), the SET transition is abrupt under positive bias, while the change of current with applied voltage in RESET process is gradual in the negative voltage sweep, so the RESET operation is a voltage-controlled procedure. In the DC current sweep (CS) as shown in Figure 1b, it is in the opposite that the SET switching is a gradual so it is a current-controlled procedure. Since the abrupt SET process happens acrimoniously, it will produce large overshoot current, leading to great damage to RRAM device. Nevertheless, the gradual process will reduce the overshoot current and the controllability on the resistance value is easy to be achieved. Consequently, by combining the positive current sweep SET and the corresponding negative voltage sweep RESET operation, i.e. by integrating current-controlled SET and voltage-controlled RESET, as shown in Figure 1d, we can obtain an effective way to make the SET and RESET process to gently and gradually evolve. From Figure 1c, both abrupt SET and RESET processes are obtained by positive voltage sweep SET and corresponding negative current sweep RESET operation.Figure 1


Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Wang G, Long S, Yu Z, Zhang M, Li Y, Xu D, Lv H, Liu Q, Yan X, Wang M, Xu X, Liu H, Yang B, Liu M - Nanoscale Res Lett (2015)

TypicalI-Vcurves and statistical distributions of Ti/HfO2/Pt RRAM device under different operation. (a) Positive voltage sweep SET and negative voltage sweep RESET processes. (b) Positive current sweep SET and negative current sweep RESET processes. (c) Positive voltage sweep SET and negative current sweep RESET processes. (d) Positive current sweep SET and negative voltage sweep RESET processes. (e-h) The cumulative distributions of Ron and Roff in 200 continuous cycles tested by the operation modes in (a-d), respectively. (i-l) The Weibull plots of the distributions of Ron and Roff in correspondence with (e-h), respectively. The straight lines are the lines fitting to standard Weibull distribution.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4385037&req=5

Fig1: TypicalI-Vcurves and statistical distributions of Ti/HfO2/Pt RRAM device under different operation. (a) Positive voltage sweep SET and negative voltage sweep RESET processes. (b) Positive current sweep SET and negative current sweep RESET processes. (c) Positive voltage sweep SET and negative current sweep RESET processes. (d) Positive current sweep SET and negative voltage sweep RESET processes. (e-h) The cumulative distributions of Ron and Roff in 200 continuous cycles tested by the operation modes in (a-d), respectively. (i-l) The Weibull plots of the distributions of Ron and Roff in correspondence with (e-h), respectively. The straight lines are the lines fitting to standard Weibull distribution.
Mentions: Figure 1a-d shows the I-V curves under four types of DC sweep measurement of the Ti/HfO2/Pt VCM device. The device works in bipolar switching mode, i.e. SET occurs in positive polarity while RESET is in negative bias. In the DC voltage sweep (VS) of the RRAM device (Figure 1a), the SET transition is abrupt under positive bias, while the change of current with applied voltage in RESET process is gradual in the negative voltage sweep, so the RESET operation is a voltage-controlled procedure. In the DC current sweep (CS) as shown in Figure 1b, it is in the opposite that the SET switching is a gradual so it is a current-controlled procedure. Since the abrupt SET process happens acrimoniously, it will produce large overshoot current, leading to great damage to RRAM device. Nevertheless, the gradual process will reduce the overshoot current and the controllability on the resistance value is easy to be achieved. Consequently, by combining the positive current sweep SET and the corresponding negative voltage sweep RESET operation, i.e. by integrating current-controlled SET and voltage-controlled RESET, as shown in Figure 1d, we can obtain an effective way to make the SET and RESET process to gently and gradually evolve. From Figure 1c, both abrupt SET and RESET processes are obtained by positive voltage sweep SET and corresponding negative current sweep RESET operation.Figure 1

Bottom Line: Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation.In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved.Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

View Article: PubMed Central - PubMed

Affiliation: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China ; Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin, 300384 China.

ABSTRACT
Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO2/Pt structure. In the DC voltage sweep of the RRAM device, the SET transition is abrupt under positive bias. If current sweep with positive bias is utilized in SET process, the SET switching will become gradual, so SET is current controlled. In the negative voltage sweep for RESET process, the change of current with applied voltage is gradual, so RESET is voltage controlled. Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation. Considering the SET/RESET characteristics in DC sweep, in the corresponding pulse operation, the width and height of the pulse series can be adjusted to control the SET and RESET process, respectively. Our new method is different from the traditional pulse operation in which both the width and height of program/erase pulse are simply kept constant which would lead to unnecessary damage to the device. In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved. Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

No MeSH data available.


Related in: MedlinePlus