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Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride.

Tang S, Wang H, Wang HS, Sun Q, Zhang X, Cong C, Xie H, Liu X, Zhou X, Huang F, Chen X, Yu T, Ding F, Xie X, Jiang M - Nat Commun (2015)

Bottom Line: Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min(-1), thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN).Hall measurements show that the mobility of the sample reaches 20,000 cm(2) V(-1) s(-1) at room temperature, which is among the best for CVD-grown graphene.Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

View Article: PubMed Central - PubMed

Affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China [2] Graduate University of the Chinese Academy of Sciences, Beijing 100049, China.

ABSTRACT
The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min(-1) or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min(-1), thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN). Hall measurements show that the mobility of the sample reaches 20,000 cm(2) V(-1) s(-1) at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

No MeSH data available.


Related in: MedlinePlus

Transport measurement of the single-crystalline graphene precisely aligned with the underlying h-BN.(a) Back-gate voltage (Vg) dependence of the longitudinal resistance at different temperatures. Inset shows the temperature dependence of the resistance at the Dirac point (DP; red spheres) and satellite peaks at the hole doping Secondary Dirac point (SDP) (black spheres). (b) Longitudinal (Rxx, blue) and Hall resistance (Rxy, red) versus Vg at temperature T=300 K and magnetic field B=9 T. (c,d) Quantum Hall effect fan diagram of (c) Rxx and (d) Rxy as a function of Vg and B at a temperature of 2 K.
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f5: Transport measurement of the single-crystalline graphene precisely aligned with the underlying h-BN.(a) Back-gate voltage (Vg) dependence of the longitudinal resistance at different temperatures. Inset shows the temperature dependence of the resistance at the Dirac point (DP; red spheres) and satellite peaks at the hole doping Secondary Dirac point (SDP) (black spheres). (b) Longitudinal (Rxx, blue) and Hall resistance (Rxy, red) versus Vg at temperature T=300 K and magnetic field B=9 T. (c,d) Quantum Hall effect fan diagram of (c) Rxx and (d) Rxy as a function of Vg and B at a temperature of 2 K.

Mentions: A Hall bar device is made on a heavily doped silicon substrate for measuring the Hall and field effect mobilities (for details of the device fabrication, see Methods and Supplementary Fig. 9). Figure 5 shows the field effect characteristics of the device (Fig. 5a), the results of the Hall measurements at a temperature of 300 K and a magnetic field of 9 T (Fig. 5b), and the effects of Landau level splitting upon the longitudinal and Hall resistances at a temperature of 2 K (Fig 5c–d). The carrier-independent field effect mobility can be calculated from the plot in Fig. 5a, and is found to be 17,000 cm2 V−1 s−1 at 300 K. The hole and electron mobilities can be derived from Fig. 5b, with values of 19,000 and 23,000 cm2 V−1 s−1, respectively. The high-mobility value measured for these samples indicates that the electrical quality of the graphene domains on h-BN is among the best for CVD-grown graphene153738 and is comparable to that of micromechanically exfoliated graphene39 (see Supplementary Table 3).


Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride.

Tang S, Wang H, Wang HS, Sun Q, Zhang X, Cong C, Xie H, Liu X, Zhou X, Huang F, Chen X, Yu T, Ding F, Xie X, Jiang M - Nat Commun (2015)

Transport measurement of the single-crystalline graphene precisely aligned with the underlying h-BN.(a) Back-gate voltage (Vg) dependence of the longitudinal resistance at different temperatures. Inset shows the temperature dependence of the resistance at the Dirac point (DP; red spheres) and satellite peaks at the hole doping Secondary Dirac point (SDP) (black spheres). (b) Longitudinal (Rxx, blue) and Hall resistance (Rxy, red) versus Vg at temperature T=300 K and magnetic field B=9 T. (c,d) Quantum Hall effect fan diagram of (c) Rxx and (d) Rxy as a function of Vg and B at a temperature of 2 K.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4382696&req=5

f5: Transport measurement of the single-crystalline graphene precisely aligned with the underlying h-BN.(a) Back-gate voltage (Vg) dependence of the longitudinal resistance at different temperatures. Inset shows the temperature dependence of the resistance at the Dirac point (DP; red spheres) and satellite peaks at the hole doping Secondary Dirac point (SDP) (black spheres). (b) Longitudinal (Rxx, blue) and Hall resistance (Rxy, red) versus Vg at temperature T=300 K and magnetic field B=9 T. (c,d) Quantum Hall effect fan diagram of (c) Rxx and (d) Rxy as a function of Vg and B at a temperature of 2 K.
Mentions: A Hall bar device is made on a heavily doped silicon substrate for measuring the Hall and field effect mobilities (for details of the device fabrication, see Methods and Supplementary Fig. 9). Figure 5 shows the field effect characteristics of the device (Fig. 5a), the results of the Hall measurements at a temperature of 300 K and a magnetic field of 9 T (Fig. 5b), and the effects of Landau level splitting upon the longitudinal and Hall resistances at a temperature of 2 K (Fig 5c–d). The carrier-independent field effect mobility can be calculated from the plot in Fig. 5a, and is found to be 17,000 cm2 V−1 s−1 at 300 K. The hole and electron mobilities can be derived from Fig. 5b, with values of 19,000 and 23,000 cm2 V−1 s−1, respectively. The high-mobility value measured for these samples indicates that the electrical quality of the graphene domains on h-BN is among the best for CVD-grown graphene153738 and is comparable to that of micromechanically exfoliated graphene39 (see Supplementary Table 3).

Bottom Line: Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min(-1), thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN).Hall measurements show that the mobility of the sample reaches 20,000 cm(2) V(-1) s(-1) at room temperature, which is among the best for CVD-grown graphene.Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

View Article: PubMed Central - PubMed

Affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China [2] Graduate University of the Chinese Academy of Sciences, Beijing 100049, China.

ABSTRACT
The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min(-1) or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min(-1), thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN). Hall measurements show that the mobility of the sample reaches 20,000 cm(2) V(-1) s(-1) at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

No MeSH data available.


Related in: MedlinePlus