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High-resolution characterization of the forbidden Si 200 and Si 222 reflections.

Zaumseil P - J Appl Crystallogr (2015)

Bottom Line: This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane.It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°.This has important consequences for the detection and verification of layer peaks in the corresponding angular range.

View Article: PubMed Central - HTML - PubMed

Affiliation: IHP , Im Technologiepark 25, Frankfurt (Oder), 15236, Germany.

ABSTRACT

The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω-2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range.

No MeSH data available.


High-resolution Φ scan close to the [011] in-plane direction with indication of the associated first and second reflecting planes of Si 200 multiple diffraction (Umweganregung).
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fig3: High-resolution Φ scan close to the [011] in-plane direction with indication of the associated first and second reflecting planes of Si 200 multiple diffraction (Umweganregung).

Mentions: Fig. 3 ▶ shows a fraction of the high-resolution curve of Fig. 2 ▶(a) around the [011] direction with an indication of the associated first and second reflecting planes of the Si 200 multiple diffraction as calculated by Hwang (2001 ▶). The calculated and measured peak positions agree perfectly, with errors less than the measuring step width of 0.012°.


High-resolution characterization of the forbidden Si 200 and Si 222 reflections.

Zaumseil P - J Appl Crystallogr (2015)

High-resolution Φ scan close to the [011] in-plane direction with indication of the associated first and second reflecting planes of Si 200 multiple diffraction (Umweganregung).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4379439&req=5

fig3: High-resolution Φ scan close to the [011] in-plane direction with indication of the associated first and second reflecting planes of Si 200 multiple diffraction (Umweganregung).
Mentions: Fig. 3 ▶ shows a fraction of the high-resolution curve of Fig. 2 ▶(a) around the [011] direction with an indication of the associated first and second reflecting planes of the Si 200 multiple diffraction as calculated by Hwang (2001 ▶). The calculated and measured peak positions agree perfectly, with errors less than the measuring step width of 0.012°.

Bottom Line: This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane.It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°.This has important consequences for the detection and verification of layer peaks in the corresponding angular range.

View Article: PubMed Central - HTML - PubMed

Affiliation: IHP , Im Technologiepark 25, Frankfurt (Oder), 15236, Germany.

ABSTRACT

The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω-2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range.

No MeSH data available.