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Superior broadband antireflection from buried Mie resonator arrays for high-efficiency photovoltaics.

Zhong S, Zeng Y, Huang Z, Shen W - Sci Rep (2015)

Bottom Line: Establishing reliable and efficient antireflection structures is of crucial importance for realizing high-performance optoelectronic devices such as solar cells.We find that the buried Mie resonator arrays mainly play a role as a transparent antireflection structure and their antireflection effect is insensitive to the nanostructure height when higher than 150 nm, which are of prominent significance for photovoltaic applications in the reduction of photoexcited carrier recombination.We further optimally combine the buried Mie resonator arrays with micron-scale textures to maximize the utilization of photons, and thus have successfully achieved an independently certified efficiency of 18.47% for the nanostructured silicon solar cells on a large-size wafer (156 mm × 156 mm).

View Article: PubMed Central - PubMed

Affiliation: Institute of Solar Energy, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.

ABSTRACT
Establishing reliable and efficient antireflection structures is of crucial importance for realizing high-performance optoelectronic devices such as solar cells. In this study, we provide a design guideline for buried Mie resonator arrays, which is composed of silicon nanostructures atop a silicon substrate and buried by a dielectric film, to attain a superior antireflection effect over a broadband spectral range by gaining entirely new discoveries of their antireflection behaviors. We find that the buried Mie resonator arrays mainly play a role as a transparent antireflection structure and their antireflection effect is insensitive to the nanostructure height when higher than 150 nm, which are of prominent significance for photovoltaic applications in the reduction of photoexcited carrier recombination. We further optimally combine the buried Mie resonator arrays with micron-scale textures to maximize the utilization of photons, and thus have successfully achieved an independently certified efficiency of 18.47% for the nanostructured silicon solar cells on a large-size wafer (156 mm × 156 mm).

No MeSH data available.


Related in: MedlinePlus

Calculated reflectance of the unburied and SiNx film buried SiNP Mie resonator arrays.The period of the SiNPs is 400 nm. The thickness of the SiNx layer varies from 35 nm to 85 nm. The dashed lines guide the reflectance dips for two different antireflection mechanisms.
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f3: Calculated reflectance of the unburied and SiNx film buried SiNP Mie resonator arrays.The period of the SiNPs is 400 nm. The thickness of the SiNx layer varies from 35 nm to 85 nm. The dashed lines guide the reflectance dips for two different antireflection mechanisms.

Mentions: Now, we turn to investigate the reflectance spectra of the 400-nm-periodic SiNPs standing on a silicon substrate and buried by the SiNx layers with different thicknesses to comprehensively reveal the novel antireflection behaviors of the typical buried Mie resonator antireflection arrays. As guided by the dashed line in the region from 680 to 1100 nm in Figure 3, broad reflectance dips are evidently observed with their minimal values gradually declining, when the thickness of the SiNx layer increases from 0 to 85 nm. Furthermore, the red-shift of the dips with increasing the SiNx layer thickness is also in agreement with that observed for the Mie resonance in a single SiNx-layer-coated SiNP (see Figure 1c). Therefore, we attribute the reflectance dip in the long wavelength range to the forward Mie scattering, and its decline is caused by the enhanced Mie resonance. In the previous studies, the Mie resonant scattering is actually discerned as the reason for the reflectance dip of the unburied SiNPs22. However, it should be noted that the resonant properties are hard to be quantitatively analyzed by the classical Mie theory due to the influence of the substrate and interparticle interaction12222425. Figure 2c presents that the Mie resonance is enhanced with the resonant wavelength red-shifting when decreasing the buried SiNPs period. Hence, besides the SiNx coating, the Mie resonant properties in buried SiNPs are also affected by array density.


Superior broadband antireflection from buried Mie resonator arrays for high-efficiency photovoltaics.

Zhong S, Zeng Y, Huang Z, Shen W - Sci Rep (2015)

Calculated reflectance of the unburied and SiNx film buried SiNP Mie resonator arrays.The period of the SiNPs is 400 nm. The thickness of the SiNx layer varies from 35 nm to 85 nm. The dashed lines guide the reflectance dips for two different antireflection mechanisms.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4352919&req=5

f3: Calculated reflectance of the unburied and SiNx film buried SiNP Mie resonator arrays.The period of the SiNPs is 400 nm. The thickness of the SiNx layer varies from 35 nm to 85 nm. The dashed lines guide the reflectance dips for two different antireflection mechanisms.
Mentions: Now, we turn to investigate the reflectance spectra of the 400-nm-periodic SiNPs standing on a silicon substrate and buried by the SiNx layers with different thicknesses to comprehensively reveal the novel antireflection behaviors of the typical buried Mie resonator antireflection arrays. As guided by the dashed line in the region from 680 to 1100 nm in Figure 3, broad reflectance dips are evidently observed with their minimal values gradually declining, when the thickness of the SiNx layer increases from 0 to 85 nm. Furthermore, the red-shift of the dips with increasing the SiNx layer thickness is also in agreement with that observed for the Mie resonance in a single SiNx-layer-coated SiNP (see Figure 1c). Therefore, we attribute the reflectance dip in the long wavelength range to the forward Mie scattering, and its decline is caused by the enhanced Mie resonance. In the previous studies, the Mie resonant scattering is actually discerned as the reason for the reflectance dip of the unburied SiNPs22. However, it should be noted that the resonant properties are hard to be quantitatively analyzed by the classical Mie theory due to the influence of the substrate and interparticle interaction12222425. Figure 2c presents that the Mie resonance is enhanced with the resonant wavelength red-shifting when decreasing the buried SiNPs period. Hence, besides the SiNx coating, the Mie resonant properties in buried SiNPs are also affected by array density.

Bottom Line: Establishing reliable and efficient antireflection structures is of crucial importance for realizing high-performance optoelectronic devices such as solar cells.We find that the buried Mie resonator arrays mainly play a role as a transparent antireflection structure and their antireflection effect is insensitive to the nanostructure height when higher than 150 nm, which are of prominent significance for photovoltaic applications in the reduction of photoexcited carrier recombination.We further optimally combine the buried Mie resonator arrays with micron-scale textures to maximize the utilization of photons, and thus have successfully achieved an independently certified efficiency of 18.47% for the nanostructured silicon solar cells on a large-size wafer (156 mm × 156 mm).

View Article: PubMed Central - PubMed

Affiliation: Institute of Solar Energy, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.

ABSTRACT
Establishing reliable and efficient antireflection structures is of crucial importance for realizing high-performance optoelectronic devices such as solar cells. In this study, we provide a design guideline for buried Mie resonator arrays, which is composed of silicon nanostructures atop a silicon substrate and buried by a dielectric film, to attain a superior antireflection effect over a broadband spectral range by gaining entirely new discoveries of their antireflection behaviors. We find that the buried Mie resonator arrays mainly play a role as a transparent antireflection structure and their antireflection effect is insensitive to the nanostructure height when higher than 150 nm, which are of prominent significance for photovoltaic applications in the reduction of photoexcited carrier recombination. We further optimally combine the buried Mie resonator arrays with micron-scale textures to maximize the utilization of photons, and thus have successfully achieved an independently certified efficiency of 18.47% for the nanostructured silicon solar cells on a large-size wafer (156 mm × 156 mm).

No MeSH data available.


Related in: MedlinePlus