Atomic force micrographsfor: (a ,c, e) GaN and AlxGa1�

Mn as Surfactant for the Self-Assembling of Al x Ga1-x N/GaN Layered Heterostructures. Devillers T, Tian L, Adhikari R, Capuzzo G, Bonanni A - Cryst Growth Des (2015) Bottom Line: The structural analysis of GaN and Al x Ga1-x N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process and in particular, the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al x Ga1-x N on GaN.Moreover, the doping with Mn promotes the formation of layered Al x Ga1-x N/GaN superlattice-like heterostructures, which opens wide perspectives for controlling the segregation of ternary alloys during the crystal growth and for fostering the self-assembling of functional layered structures. View Article: PubMed Central - PubMed Affiliation: Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University , Altenbergerstr. 69, A-4040 Linz, Austria. ABSTRACT The structural analysis of GaN and Al x Ga1-x N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process and in particular, the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al x Ga1-x N on GaN. Moreover, the doping with Mn promotes the formation of layered Al x Ga1-x N/GaN superlattice-like heterostructures, which opens wide perspectives for controlling the segregation of ternary alloys during the crystal growth and for fostering the self-assembling of functional layered structures. No MeSH data available.	© Copyright Policy Related In: Results - Collection License Show All Figures getmorefigures.php?uid=PMC4319447&req=5 fig1: Atomic force micrographsfor: (a ,c, e) GaN and AlxGa1–xN in theabsence of Mn; (b, d, f) GaN:Mn and AlxGa1–xN:Mn. Mentions: The effect of Mn on the surfacemorphology of GaN and AlxGa1–xN is studiedby AFM by directly contrasting GaN, Al0.75Ga0.25N and Al0.12Ga0.88N grown in the absence ofMn (samples #A, #C, and #E) with samples grown under the same conditionsbut deposited in the presence of Mn (samples #B, #D, and #F), as reportedin Figure 1. The compared samples have thesame nominal and actual thickness and differ only in the presenceof Mn during the growth process.

Mn as Surfactant for the Self-Assembling of Al x Ga1-x N/GaN Layered Heterostructures.

Devillers T, Tian L, Adhikari R, Capuzzo G, Bonanni A - Cryst Growth Des (2015)

Bottom Line: The structural analysis of GaN and Al x Ga1-x N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process and in particular, the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al x Ga1-x N on GaN.Moreover, the doping with Mn promotes the formation of layered Al x Ga1-x N/GaN superlattice-like heterostructures, which opens wide perspectives for controlling the segregation of ternary alloys during the crystal growth and for fostering the self-assembling of functional layered structures.

View Article: PubMed Central - PubMed

Affiliation: Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University , Altenbergerstr. 69, A-4040 Linz, Austria.

ABSTRACT

The structural analysis of GaN and Al x Ga1-x N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process and in particular, the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al x Ga1-x N on GaN. Moreover, the doping with Mn promotes the formation of layered Al x Ga1-x N/GaN superlattice-like heterostructures, which opens wide perspectives for controlling the segregation of ternary alloys during the crystal growth and for fostering the self-assembling of functional layered structures.

No MeSH data available.

Atomic force micrographsfor: (a ,c, e) GaN and AlxGa1–xN in theabsence of Mn; (b, d, f) GaN:Mn and AlxGa1–xN:Mn.

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fig1: Atomic force micrographsfor: (a ,c, e) GaN and AlxGa1–xN in theabsence of Mn; (b, d, f) GaN:Mn and AlxGa1–xN:Mn.

Mentions: The effect of Mn on the surfacemorphology of GaN and AlxGa1–xN is studiedby AFM by directly contrasting GaN, Al0.75Ga0.25N and Al0.12Ga0.88N grown in the absence ofMn (samples #A, #C, and #E) with samples grown under the same conditionsbut deposited in the presence of Mn (samples #B, #D, and #F), as reportedin Figure 1. The compared samples have thesame nominal and actual thickness and differ only in the presenceof Mn during the growth process.