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Engineering two-dimensional superconductivity and Rashba spin-orbit coupling in LaAlO₃/SrTiO₃ quantum wells by selective orbital occupancy.

Herranz G, Singh G, Bergeal N, Jouan A, Lesueur J, Gázquez J, Varela M, Scigaj M, Dix N, Sánchez F, Fontcuberta J - Nat Commun (2015)

Bottom Line: The discovery of two-dimensional electron gases (2DEGs) at oxide interfaces-involving electrons in narrow d-bands-has broken new ground, enabling the access to correlated states that are unreachable in conventional semiconductors based on s- and p- electrons.There is a growing consensus that emerging properties at these novel quantum wells-such as 2D superconductivity and magnetism-are intimately connected to specific orbital symmetries in the 2DEG sub-band structure.Such an orientational tuning expands the possibilities for electronic engineering of 2DEGs at LaAlO3/SrTiO3 interfaces.

View Article: PubMed Central - PubMed

Affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Catalonia, Spain.

ABSTRACT
The discovery of two-dimensional electron gases (2DEGs) at oxide interfaces-involving electrons in narrow d-bands-has broken new ground, enabling the access to correlated states that are unreachable in conventional semiconductors based on s- and p- electrons. There is a growing consensus that emerging properties at these novel quantum wells-such as 2D superconductivity and magnetism-are intimately connected to specific orbital symmetries in the 2DEG sub-band structure. Here we show that crystal orientation allows selective orbital occupancy, disclosing unprecedented ways to tailor the 2DEG properties. By carrying out electrostatic gating experiments in LaAlO3/SrTiO3 wells of different crystal orientations, we show that the spatial extension and anisotropy of the 2D superconductivity and the Rashba spin-orbit field can be largely modulated by controlling the 2DEG sub-band filling. Such an orientational tuning expands the possibilities for electronic engineering of 2DEGs at LaAlO3/SrTiO3 interfaces.

No MeSH data available.


Related in: MedlinePlus

Analysis of the spin-orbit coupling at the (001) and (110) interfaces.The field-dependent magnetoconductance Δσ(B) normalized by the quantum of conductance G0 was measured under different gate voltages Vg. Data measured at T=3.3 K are shown for the (a) (110) and (b) (001) interfaces. Dashed lines are the fittings to equation (1) and the values of the applied voltage are indicated in the panels. The dependence of the spin–orbit term BSO on the gate voltage Vg is plotted (c). The Kohler AK and inelastic Bφ terms obtained from fittings to equation (1) are plotted in (d) and inset, respectively.
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f4: Analysis of the spin-orbit coupling at the (001) and (110) interfaces.The field-dependent magnetoconductance Δσ(B) normalized by the quantum of conductance G0 was measured under different gate voltages Vg. Data measured at T=3.3 K are shown for the (a) (110) and (b) (001) interfaces. Dashed lines are the fittings to equation (1) and the values of the applied voltage are indicated in the panels. The dependence of the spin–orbit term BSO on the gate voltage Vg is plotted (c). The Kohler AK and inelastic Bφ terms obtained from fittings to equation (1) are plotted in (d) and inset, respectively.

Mentions: To probe the effects of orientational reconstruction on the spin–orbit term BSO, we analysed the field dependence of the magnetoconductance at the normal state recorded at a temperature T=3.3 K under applied electric fields (Fig. 4a,b). The experimental data were fitted to the expression3842


Engineering two-dimensional superconductivity and Rashba spin-orbit coupling in LaAlO₃/SrTiO₃ quantum wells by selective orbital occupancy.

Herranz G, Singh G, Bergeal N, Jouan A, Lesueur J, Gázquez J, Varela M, Scigaj M, Dix N, Sánchez F, Fontcuberta J - Nat Commun (2015)

Analysis of the spin-orbit coupling at the (001) and (110) interfaces.The field-dependent magnetoconductance Δσ(B) normalized by the quantum of conductance G0 was measured under different gate voltages Vg. Data measured at T=3.3 K are shown for the (a) (110) and (b) (001) interfaces. Dashed lines are the fittings to equation (1) and the values of the applied voltage are indicated in the panels. The dependence of the spin–orbit term BSO on the gate voltage Vg is plotted (c). The Kohler AK and inelastic Bφ terms obtained from fittings to equation (1) are plotted in (d) and inset, respectively.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4308716&req=5

f4: Analysis of the spin-orbit coupling at the (001) and (110) interfaces.The field-dependent magnetoconductance Δσ(B) normalized by the quantum of conductance G0 was measured under different gate voltages Vg. Data measured at T=3.3 K are shown for the (a) (110) and (b) (001) interfaces. Dashed lines are the fittings to equation (1) and the values of the applied voltage are indicated in the panels. The dependence of the spin–orbit term BSO on the gate voltage Vg is plotted (c). The Kohler AK and inelastic Bφ terms obtained from fittings to equation (1) are plotted in (d) and inset, respectively.
Mentions: To probe the effects of orientational reconstruction on the spin–orbit term BSO, we analysed the field dependence of the magnetoconductance at the normal state recorded at a temperature T=3.3 K under applied electric fields (Fig. 4a,b). The experimental data were fitted to the expression3842

Bottom Line: The discovery of two-dimensional electron gases (2DEGs) at oxide interfaces-involving electrons in narrow d-bands-has broken new ground, enabling the access to correlated states that are unreachable in conventional semiconductors based on s- and p- electrons.There is a growing consensus that emerging properties at these novel quantum wells-such as 2D superconductivity and magnetism-are intimately connected to specific orbital symmetries in the 2DEG sub-band structure.Such an orientational tuning expands the possibilities for electronic engineering of 2DEGs at LaAlO3/SrTiO3 interfaces.

View Article: PubMed Central - PubMed

Affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Catalonia, Spain.

ABSTRACT
The discovery of two-dimensional electron gases (2DEGs) at oxide interfaces-involving electrons in narrow d-bands-has broken new ground, enabling the access to correlated states that are unreachable in conventional semiconductors based on s- and p- electrons. There is a growing consensus that emerging properties at these novel quantum wells-such as 2D superconductivity and magnetism-are intimately connected to specific orbital symmetries in the 2DEG sub-band structure. Here we show that crystal orientation allows selective orbital occupancy, disclosing unprecedented ways to tailor the 2DEG properties. By carrying out electrostatic gating experiments in LaAlO3/SrTiO3 wells of different crystal orientations, we show that the spatial extension and anisotropy of the 2D superconductivity and the Rashba spin-orbit field can be largely modulated by controlling the 2DEG sub-band filling. Such an orientational tuning expands the possibilities for electronic engineering of 2DEGs at LaAlO3/SrTiO3 interfaces.

No MeSH data available.


Related in: MedlinePlus