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Intrinsic topological insulator Bi(1.5)Sb(0.5)Te(3-x)Se(x) thin crystals.

Wang W, Li L, Zou W, He L, Song F, Zhang R, Wu X, Zhang F - Sci Rep (2015)

Bottom Line: A correlation between the structure and the physical properties has been revealed.We found out that within the rhombohedral structure, the composition with most Te substituting Se has the highest resistivity.On the other hand, segregation of other composition phases will introduce much higher bulk concentration.

View Article: PubMed Central - PubMed

Affiliation: National Laboratory of Solid State Microstructures, Center of Photovoltaic Engineering and School of Physics, Nanjing University, Nanjing 210093, China.

ABSTRACT
The quaternary topological insulator (Bi,Sb)2(Te,Se)3 has demonstrated topological surface states with an insulating bulk. Scientists have identified an optimized composition of Bi(1.5)Sb(0.5)Te(1.7)Se(1.3) with the highest resistivity reported. But the physics that drive to this composition remains unclear. Here we report the crystal structure and the magneto-transport properties of Bi(1.5)Sb(0.5)Te(3-x)Se(x) (BSTS) series. A correlation between the structure and the physical properties has been revealed. We found out that within the rhombohedral structure, the composition with most Te substituting Se has the highest resistivity. On the other hand, segregation of other composition phases will introduce much higher bulk concentration.

No MeSH data available.


Related in: MedlinePlus

(a) Temperature dependences of ρxx for varies Se concentration x.(b) The Arrhenius plot (ln(ρxx) vs. 1/T) at high temperature. Dashed black lines represent the linear fittings, which give estimations of the activation energy. (c) The concentration dependence of the activation energy and the highest resistivity at low temperature. Both peak at x = 1.2.
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f2: (a) Temperature dependences of ρxx for varies Se concentration x.(b) The Arrhenius plot (ln(ρxx) vs. 1/T) at high temperature. Dashed black lines represent the linear fittings, which give estimations of the activation energy. (c) The concentration dependence of the activation energy and the highest resistivity at low temperature. Both peak at x = 1.2.

Mentions: We have studied the electronic properties of samples, as shown in Figure 1a inset, for all the concentration x from 1.0 to 1.5. The longitudinal resistivity (ρxx) as a function of temperature (T) is displayed in Figure 2a. For all the samples, except x = 1.5 and 1.0, the R-T curves demonstrate an increase as temperatures decrease at high temperatures, a typical behavior of semiconductors. The activation energy can be estimated from the Arrhenius plot of ln(ρxx) vs 1/T, as shown in Figure 2b at high temperatures. Figure 2c exhibits the activation energy extracted from the linear fit. A peak at composition x = 1.2 is evidenced.


Intrinsic topological insulator Bi(1.5)Sb(0.5)Te(3-x)Se(x) thin crystals.

Wang W, Li L, Zou W, He L, Song F, Zhang R, Wu X, Zhang F - Sci Rep (2015)

(a) Temperature dependences of ρxx for varies Se concentration x.(b) The Arrhenius plot (ln(ρxx) vs. 1/T) at high temperature. Dashed black lines represent the linear fittings, which give estimations of the activation energy. (c) The concentration dependence of the activation energy and the highest resistivity at low temperature. Both peak at x = 1.2.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4300459&req=5

f2: (a) Temperature dependences of ρxx for varies Se concentration x.(b) The Arrhenius plot (ln(ρxx) vs. 1/T) at high temperature. Dashed black lines represent the linear fittings, which give estimations of the activation energy. (c) The concentration dependence of the activation energy and the highest resistivity at low temperature. Both peak at x = 1.2.
Mentions: We have studied the electronic properties of samples, as shown in Figure 1a inset, for all the concentration x from 1.0 to 1.5. The longitudinal resistivity (ρxx) as a function of temperature (T) is displayed in Figure 2a. For all the samples, except x = 1.5 and 1.0, the R-T curves demonstrate an increase as temperatures decrease at high temperatures, a typical behavior of semiconductors. The activation energy can be estimated from the Arrhenius plot of ln(ρxx) vs 1/T, as shown in Figure 2b at high temperatures. Figure 2c exhibits the activation energy extracted from the linear fit. A peak at composition x = 1.2 is evidenced.

Bottom Line: A correlation between the structure and the physical properties has been revealed.We found out that within the rhombohedral structure, the composition with most Te substituting Se has the highest resistivity.On the other hand, segregation of other composition phases will introduce much higher bulk concentration.

View Article: PubMed Central - PubMed

Affiliation: National Laboratory of Solid State Microstructures, Center of Photovoltaic Engineering and School of Physics, Nanjing University, Nanjing 210093, China.

ABSTRACT
The quaternary topological insulator (Bi,Sb)2(Te,Se)3 has demonstrated topological surface states with an insulating bulk. Scientists have identified an optimized composition of Bi(1.5)Sb(0.5)Te(1.7)Se(1.3) with the highest resistivity reported. But the physics that drive to this composition remains unclear. Here we report the crystal structure and the magneto-transport properties of Bi(1.5)Sb(0.5)Te(3-x)Se(x) (BSTS) series. A correlation between the structure and the physical properties has been revealed. We found out that within the rhombohedral structure, the composition with most Te substituting Se has the highest resistivity. On the other hand, segregation of other composition phases will introduce much higher bulk concentration.

No MeSH data available.


Related in: MedlinePlus