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Interfacial charge-mediated non-volatile magnetoelectric coupling in Co₀.₃Fe₀.₇/Ba₀.₆Sr₀.₄TiO₃/Nb:SrTiO₃ multiferroic heterostructures.

Zhou Z, Howe BM, Liu M, Nan T, Chen X, Mahalingam K, Sun NX, Brown GJ - Sci Rep (2015)

Bottom Line: In this work, we demonstrate using electrical polarization-induced charge screening to change the ground state of magnetic ordering in order to non-volatilely tune magnetic properties in ultra-thin Co₀.₃Fe₀.₇/Ba₀.₆Sr₀.₄TiO₃/Nb:SrTiO₃ (001) multiferroic heterostructures.A robust, voltage-induced, non-volatile manipulation of out-of-plane magnetic anisotropy up to 40 Oe is demonstrated and confirmed by ferromagnetic resonance measurements.This discovery provides a framework for realizing charge-sensitive order parameter tuning in ultra-thin multiferroic heterostructures, demonstrating great potential for delivering compact, lightweight, reconfigurable, and energy-efficient electronic devices.

View Article: PubMed Central - PubMed

Affiliation: 1] Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, USA, 02115 [2] Energy Systems Division, Argonne National Laboratory, Lemont, IL, USA, 60439.

ABSTRACT
The central challenge in realizing non-volatile, E-field manipulation of magnetism lies in finding an energy efficient means to switch between the distinct magnetic states in a stable and reversible manner. In this work, we demonstrate using electrical polarization-induced charge screening to change the ground state of magnetic ordering in order to non-volatilely tune magnetic properties in ultra-thin Co₀.₃Fe₀.₇/Ba₀.₆Sr₀.₄TiO₃/Nb:SrTiO₃ (001) multiferroic heterostructures. A robust, voltage-induced, non-volatile manipulation of out-of-plane magnetic anisotropy up to 40 Oe is demonstrated and confirmed by ferromagnetic resonance measurements. This discovery provides a framework for realizing charge-sensitive order parameter tuning in ultra-thin multiferroic heterostructures, demonstrating great potential for delivering compact, lightweight, reconfigurable, and energy-efficient electronic devices.

No MeSH data available.


Related in: MedlinePlus

Non-volatile voltage control of FMR field in CoFe/BSTO heterostructure.(a) FMR spectra measured before and after voltage impulse (6 V, <100 ms); (b) Voltage impulses (6 V, −6 V, <100 ms) induced non-volatile FMR field shift.
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f6: Non-volatile voltage control of FMR field in CoFe/BSTO heterostructure.(a) FMR spectra measured before and after voltage impulse (6 V, <100 ms); (b) Voltage impulses (6 V, −6 V, <100 ms) induced non-volatile FMR field shift.

Mentions: In Figure 6(a), a voltage impulse with amplitude of 6 V (<100 ms) is applied to the BSTO layer. A non-volatile FMR field switch of 17 Oe occurs (after 100 cycles, we can still obtain ~15 Oe FMR field shift, showing a good repeatability), representing an effective anisotropy change of ΔKeff = 3.0 kJ/m3, and surface anisotropy change of ΔKS = 3.6 μJ/m2. By applying alternating voltage impulses (6 V, −6 V), as shown in Figure 6(b), the FMR field can be reliably switched back and forth from ~2880 Oe to ~2897 Oe. Here, the capacitor effect plays an important role. Charge remains on in the electrode without depletion after switching the voltage impulses, therefore, the FMR fields remain until the next voltage impulse occurs, due to remnant charge effect. Therefore, in CoFe/BSTO multiferroic thin films heterostructures, the magnetic and RF/microwave properties can be manipulated by smaller amplitude voltage impulses, and with repeatability. Our progress provides a viable route towards realizing non-volatile control of magnetism through E-field induced surface charge accumulation.


Interfacial charge-mediated non-volatile magnetoelectric coupling in Co₀.₃Fe₀.₇/Ba₀.₆Sr₀.₄TiO₃/Nb:SrTiO₃ multiferroic heterostructures.

Zhou Z, Howe BM, Liu M, Nan T, Chen X, Mahalingam K, Sun NX, Brown GJ - Sci Rep (2015)

Non-volatile voltage control of FMR field in CoFe/BSTO heterostructure.(a) FMR spectra measured before and after voltage impulse (6 V, <100 ms); (b) Voltage impulses (6 V, −6 V, <100 ms) induced non-volatile FMR field shift.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4291561&req=5

f6: Non-volatile voltage control of FMR field in CoFe/BSTO heterostructure.(a) FMR spectra measured before and after voltage impulse (6 V, <100 ms); (b) Voltage impulses (6 V, −6 V, <100 ms) induced non-volatile FMR field shift.
Mentions: In Figure 6(a), a voltage impulse with amplitude of 6 V (<100 ms) is applied to the BSTO layer. A non-volatile FMR field switch of 17 Oe occurs (after 100 cycles, we can still obtain ~15 Oe FMR field shift, showing a good repeatability), representing an effective anisotropy change of ΔKeff = 3.0 kJ/m3, and surface anisotropy change of ΔKS = 3.6 μJ/m2. By applying alternating voltage impulses (6 V, −6 V), as shown in Figure 6(b), the FMR field can be reliably switched back and forth from ~2880 Oe to ~2897 Oe. Here, the capacitor effect plays an important role. Charge remains on in the electrode without depletion after switching the voltage impulses, therefore, the FMR fields remain until the next voltage impulse occurs, due to remnant charge effect. Therefore, in CoFe/BSTO multiferroic thin films heterostructures, the magnetic and RF/microwave properties can be manipulated by smaller amplitude voltage impulses, and with repeatability. Our progress provides a viable route towards realizing non-volatile control of magnetism through E-field induced surface charge accumulation.

Bottom Line: In this work, we demonstrate using electrical polarization-induced charge screening to change the ground state of magnetic ordering in order to non-volatilely tune magnetic properties in ultra-thin Co₀.₃Fe₀.₇/Ba₀.₆Sr₀.₄TiO₃/Nb:SrTiO₃ (001) multiferroic heterostructures.A robust, voltage-induced, non-volatile manipulation of out-of-plane magnetic anisotropy up to 40 Oe is demonstrated and confirmed by ferromagnetic resonance measurements.This discovery provides a framework for realizing charge-sensitive order parameter tuning in ultra-thin multiferroic heterostructures, demonstrating great potential for delivering compact, lightweight, reconfigurable, and energy-efficient electronic devices.

View Article: PubMed Central - PubMed

Affiliation: 1] Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, USA, 02115 [2] Energy Systems Division, Argonne National Laboratory, Lemont, IL, USA, 60439.

ABSTRACT
The central challenge in realizing non-volatile, E-field manipulation of magnetism lies in finding an energy efficient means to switch between the distinct magnetic states in a stable and reversible manner. In this work, we demonstrate using electrical polarization-induced charge screening to change the ground state of magnetic ordering in order to non-volatilely tune magnetic properties in ultra-thin Co₀.₃Fe₀.₇/Ba₀.₆Sr₀.₄TiO₃/Nb:SrTiO₃ (001) multiferroic heterostructures. A robust, voltage-induced, non-volatile manipulation of out-of-plane magnetic anisotropy up to 40 Oe is demonstrated and confirmed by ferromagnetic resonance measurements. This discovery provides a framework for realizing charge-sensitive order parameter tuning in ultra-thin multiferroic heterostructures, demonstrating great potential for delivering compact, lightweight, reconfigurable, and energy-efficient electronic devices.

No MeSH data available.


Related in: MedlinePlus