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The n-type Ge photodetectors with gold nanoparticles deposited to enhance the responsivity.

Hsiao HT, Ni IC, Tzeng SD, Lin WF, Lin CH - Nanoscale Res Lett (2014)

Bottom Line: Two different coverage ratios, including 10.5 and 30.3% of AuNPs have been prepared, and the fabricated photodetectors are compared with the control sample.The reflectance decreases with AuNP deposition, and a denser coverage results in a smaller reflectance.The smaller reflectance indicates more light could penetrate into the Ge active layer, and it results in a larger responsivity.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Opto-electronic Engineering, National Dong Hwa University, Shoufeng, Hualien 974, Taiwan.

ABSTRACT
Gold nanoparticles (AuNPs) have been deposited on n-type Ge photodetectors to improve the responsivity. Two different coverage ratios, including 10.5 and 30.3% of AuNPs have been prepared, and the fabricated photodetectors are compared with the control sample. The 1,310-nm responsivities at -2 V of the control, 10.5% AuNPs, and 30.3% AuNPs samples are 465, 556, and 623 mA/W, respectively. The AuNPs could increase the responsivities due to the plasmon resonance. The reflectance spectra of these samples have been measured to verify that plasmon resonance contributes to the forward scattering of incident light. The reflectance decreases with AuNP deposition, and a denser coverage results in a smaller reflectance. The smaller reflectance indicates more light could penetrate into the Ge active layer, and it results in a larger responsivity.

No MeSH data available.


The structure of the n-type Ge photodetector with AuNPs covering it and the setup used to measure the photoresponse. The tip of the fiber was tilted at 45 degrees and pointed toward the edge of the circular Al gate with an optical power of 1.5 mW.
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Figure 3: The structure of the n-type Ge photodetector with AuNPs covering it and the setup used to measure the photoresponse. The tip of the fiber was tilted at 45 degrees and pointed toward the edge of the circular Al gate with an optical power of 1.5 mW.

Mentions: The schematic structure of an n-type Ge photodetector with AuNPs and the setup used to measure the photoresponse are shown in Figure 3. The laser diode with an emission wavelength at 1,310 nm and an optical power of 1.5 mW was irradiated at the edge of the circular Al gate to measure the photoresponse. The core size of the fiber output of the laser diode is 9 μm, which is much larger than each nanoparticle (~30 nm), and hence, the measured optical characteristics would be contributed by the abundant AuNPs.


The n-type Ge photodetectors with gold nanoparticles deposited to enhance the responsivity.

Hsiao HT, Ni IC, Tzeng SD, Lin WF, Lin CH - Nanoscale Res Lett (2014)

The structure of the n-type Ge photodetector with AuNPs covering it and the setup used to measure the photoresponse. The tip of the fiber was tilted at 45 degrees and pointed toward the edge of the circular Al gate with an optical power of 1.5 mW.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4256966&req=5

Figure 3: The structure of the n-type Ge photodetector with AuNPs covering it and the setup used to measure the photoresponse. The tip of the fiber was tilted at 45 degrees and pointed toward the edge of the circular Al gate with an optical power of 1.5 mW.
Mentions: The schematic structure of an n-type Ge photodetector with AuNPs and the setup used to measure the photoresponse are shown in Figure 3. The laser diode with an emission wavelength at 1,310 nm and an optical power of 1.5 mW was irradiated at the edge of the circular Al gate to measure the photoresponse. The core size of the fiber output of the laser diode is 9 μm, which is much larger than each nanoparticle (~30 nm), and hence, the measured optical characteristics would be contributed by the abundant AuNPs.

Bottom Line: Two different coverage ratios, including 10.5 and 30.3% of AuNPs have been prepared, and the fabricated photodetectors are compared with the control sample.The reflectance decreases with AuNP deposition, and a denser coverage results in a smaller reflectance.The smaller reflectance indicates more light could penetrate into the Ge active layer, and it results in a larger responsivity.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Opto-electronic Engineering, National Dong Hwa University, Shoufeng, Hualien 974, Taiwan.

ABSTRACT
Gold nanoparticles (AuNPs) have been deposited on n-type Ge photodetectors to improve the responsivity. Two different coverage ratios, including 10.5 and 30.3% of AuNPs have been prepared, and the fabricated photodetectors are compared with the control sample. The 1,310-nm responsivities at -2 V of the control, 10.5% AuNPs, and 30.3% AuNPs samples are 465, 556, and 623 mA/W, respectively. The AuNPs could increase the responsivities due to the plasmon resonance. The reflectance spectra of these samples have been measured to verify that plasmon resonance contributes to the forward scattering of incident light. The reflectance decreases with AuNP deposition, and a denser coverage results in a smaller reflectance. The smaller reflectance indicates more light could penetrate into the Ge active layer, and it results in a larger responsivity.

No MeSH data available.