Limits...
Anisotropic giant magnetoresistance in NbSb2.

Wang K, Graf D, Li L, Wang L, Petrovic C - Sci Rep (2014)

Bottom Line: The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application.Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane.The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals.

View Article: PubMed Central - PubMed

Affiliation: Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973 USA.

ABSTRACT
The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10(5)% in 2 K and 9 T field, and 4.3 × 10(6)% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals.

No MeSH data available.


Related in: MedlinePlus

Crystal structure and giant magnetoresistance of NbSb2.(a) Crystal structure of NbSb2. The angle β is between the a and c axis. (b) A typical crystal of NbSb2. The long axis of the crystal is b-axis. (c) The temperature dependence of the resistivity in magnetic fields with the current parallel to b-axis and the magnetic field perpendicular to the current (parallel to the ac-plane). (d) The magnetic field dependence of the magnetoresistant ratio defined as MR = (R(H) − R(0))/R(0), with same configuration as in (a). The red line is the fitting result using quadratic field dependence.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4256591&req=5

f1: Crystal structure and giant magnetoresistance of NbSb2.(a) Crystal structure of NbSb2. The angle β is between the a and c axis. (b) A typical crystal of NbSb2. The long axis of the crystal is b-axis. (c) The temperature dependence of the resistivity in magnetic fields with the current parallel to b-axis and the magnetic field perpendicular to the current (parallel to the ac-plane). (d) The magnetic field dependence of the magnetoresistant ratio defined as MR = (R(H) − R(0))/R(0), with same configuration as in (a). The red line is the fitting result using quadratic field dependence.

Mentions: NbSb2 single crystals grew from high-temperature self flux method and crystallize in a complex monoclinic structure (Fig. 1(a)) with C12/m1 space group with the refined lattice parameters are a = 10.233(1)Å, b = 3.630(1)Å, c = 8.3285(2)Å, β = 120.04(2)° (see Supplementary Figure 1). The b-axis is perpendicular to the ac-plane (Fig. 1(a)). The image of a typical single crystal of NbSb2 is shown in Fig. 1(b). It was found that the crystal grows along the b-axis more quickly and the red arrow in Fig. 1(b) shows the b-axis. The temperature dependent resistivity in different magnetic field of NbSb2 with the current parallel to the b-axis and the magnetic field perpendicular to the current (parallel to the ac-plane) is shown in Fig. 1(c). The crystal shows metallic behavior and the residual resistivity ratio (ρ300K/ρ2K) in zero field is about 450 (with current along the b-axis) which suggests high sample quality since the defects (such as grain boundaries and impurities) contribute to the residual resistivity ρ0 in the metal.


Anisotropic giant magnetoresistance in NbSb2.

Wang K, Graf D, Li L, Wang L, Petrovic C - Sci Rep (2014)

Crystal structure and giant magnetoresistance of NbSb2.(a) Crystal structure of NbSb2. The angle β is between the a and c axis. (b) A typical crystal of NbSb2. The long axis of the crystal is b-axis. (c) The temperature dependence of the resistivity in magnetic fields with the current parallel to b-axis and the magnetic field perpendicular to the current (parallel to the ac-plane). (d) The magnetic field dependence of the magnetoresistant ratio defined as MR = (R(H) − R(0))/R(0), with same configuration as in (a). The red line is the fitting result using quadratic field dependence.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4256591&req=5

f1: Crystal structure and giant magnetoresistance of NbSb2.(a) Crystal structure of NbSb2. The angle β is between the a and c axis. (b) A typical crystal of NbSb2. The long axis of the crystal is b-axis. (c) The temperature dependence of the resistivity in magnetic fields with the current parallel to b-axis and the magnetic field perpendicular to the current (parallel to the ac-plane). (d) The magnetic field dependence of the magnetoresistant ratio defined as MR = (R(H) − R(0))/R(0), with same configuration as in (a). The red line is the fitting result using quadratic field dependence.
Mentions: NbSb2 single crystals grew from high-temperature self flux method and crystallize in a complex monoclinic structure (Fig. 1(a)) with C12/m1 space group with the refined lattice parameters are a = 10.233(1)Å, b = 3.630(1)Å, c = 8.3285(2)Å, β = 120.04(2)° (see Supplementary Figure 1). The b-axis is perpendicular to the ac-plane (Fig. 1(a)). The image of a typical single crystal of NbSb2 is shown in Fig. 1(b). It was found that the crystal grows along the b-axis more quickly and the red arrow in Fig. 1(b) shows the b-axis. The temperature dependent resistivity in different magnetic field of NbSb2 with the current parallel to the b-axis and the magnetic field perpendicular to the current (parallel to the ac-plane) is shown in Fig. 1(c). The crystal shows metallic behavior and the residual resistivity ratio (ρ300K/ρ2K) in zero field is about 450 (with current along the b-axis) which suggests high sample quality since the defects (such as grain boundaries and impurities) contribute to the residual resistivity ρ0 in the metal.

Bottom Line: The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application.Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane.The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals.

View Article: PubMed Central - PubMed

Affiliation: Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973 USA.

ABSTRACT
The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10(5)% in 2 K and 9 T field, and 4.3 × 10(6)% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals.

No MeSH data available.


Related in: MedlinePlus