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The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template.

Jiang C, Wu L, Wei W, Dong C, Yao J - Nanoscale Res Lett (2014)

Bottom Line: Stable and repeatable resistive switching behavior is acquired at the same time.Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected.The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect. 68.37.-d; 73.40.Rw; 73.61.-r.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China.

ABSTRACT

Unlabelled: A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe2O4 thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect.

Pacs: 68.37.-d; 73.40.Rw; 73.61.-r.

No MeSH data available.


The schematic illustration of sample and the scheme of operation of a memory cell. (a) the schematic illustration of sample and (b) the scheme of operation of a memory cell based on conductive filament model.
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Figure 4: The schematic illustration of sample and the scheme of operation of a memory cell. (a) the schematic illustration of sample and (b) the scheme of operation of a memory cell based on conductive filament model.

Mentions: The current-voltage (I-V) cycle of the sample after annealing is plotted in Figure 3a. The bias voltage is swept as 0 V → 6 V → 0 V → -4 V → 0 V, the bipolar RS characteristics are obtained. As the positive voltage increased at around 2.5 V, the current increased suddenly, which indicated that the cell switched from high-resistance states (HRS) to low-resistance states (LRS), it has been defined as set process. When the negative voltage was applied on the device, the switching from LRS to HRS was occurred at about -1.5 V (defined as reset process). The schematic diagram of the structure was displayed in Figure 4a, Au top electrodes with diameter of 0.1 mm were deposited on the films, and the bottom of the sample is Al substrate. The positive voltage is defined as form top to bottom. Figure 3b depicts the I-V curve in semi-log scale for repeat measurements, good repeatability is exhibited. To investigate the stability of RS behaviors, the resistances changing with pulse numbers are displayed in Figure 3c, the stable variation is also presented.


The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template.

Jiang C, Wu L, Wei W, Dong C, Yao J - Nanoscale Res Lett (2014)

The schematic illustration of sample and the scheme of operation of a memory cell. (a) the schematic illustration of sample and (b) the scheme of operation of a memory cell based on conductive filament model.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4232846&req=5

Figure 4: The schematic illustration of sample and the scheme of operation of a memory cell. (a) the schematic illustration of sample and (b) the scheme of operation of a memory cell based on conductive filament model.
Mentions: The current-voltage (I-V) cycle of the sample after annealing is plotted in Figure 3a. The bias voltage is swept as 0 V → 6 V → 0 V → -4 V → 0 V, the bipolar RS characteristics are obtained. As the positive voltage increased at around 2.5 V, the current increased suddenly, which indicated that the cell switched from high-resistance states (HRS) to low-resistance states (LRS), it has been defined as set process. When the negative voltage was applied on the device, the switching from LRS to HRS was occurred at about -1.5 V (defined as reset process). The schematic diagram of the structure was displayed in Figure 4a, Au top electrodes with diameter of 0.1 mm were deposited on the films, and the bottom of the sample is Al substrate. The positive voltage is defined as form top to bottom. Figure 3b depicts the I-V curve in semi-log scale for repeat measurements, good repeatability is exhibited. To investigate the stability of RS behaviors, the resistances changing with pulse numbers are displayed in Figure 3c, the stable variation is also presented.

Bottom Line: Stable and repeatable resistive switching behavior is acquired at the same time.Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected.The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect. 68.37.-d; 73.40.Rw; 73.61.-r.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China.

ABSTRACT

Unlabelled: A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe2O4 thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect.

Pacs: 68.37.-d; 73.40.Rw; 73.61.-r.

No MeSH data available.