Limits...
Analytical performance of 3 m and 3 m +1 armchair graphene nanoribbons under uniaxial strain.

Kang ES, Ismail R - Nanoscale Res Lett (2014)

Bottom Line: Discrepancies between the classical calculation and quantum calculation were also measured.It has been found that as much as 19% of the drive current loss is due to the quantum confinement.These analytical models which agree well with the experimental and numerical results provide physical insights into the characterizations of uniaxial strained AGNRs.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Electronic and Computer Engineering, Southern University College, Skudai 81310, Johor Darul Takzim, Malaysia.

ABSTRACT
The electronic band structure and carrier density of strained armchair graphene nanoribbons (AGNRs) with widths of n =3 m and n =3 m +1 were examined using tight-binding approximation. The current-voltage (I-V) model of uniaxial strained n =3 m AGNRs incorporating quantum confinement effects is also presented in this paper. The derivation originates from energy dispersion throughout the entire Brillouin zone of uniaxial strained AGNRs based on a tight-binding approximation. Our results reveal the modification of the energy bandgap, carrier density, and drain current upon strain. Unlike the two-dimensional graphene, whose bandgap remains near to zero even when a large strain is applied, the bandgap and carrier density of AGNRs are shown to be sensitive to the magnitude of uniaxial strain. Discrepancies between the classical calculation and quantum calculation were also measured. It has been found that as much as 19% of the drive current loss is due to the quantum confinement. These analytical models which agree well with the experimental and numerical results provide physical insights into the characterizations of uniaxial strained AGNRs.

No MeSH data available.


Related in: MedlinePlus

Energy band diagram showing the nondegenerate and degenerate regions.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4231444&req=5

Figure 1: Energy band diagram showing the nondegenerate and degenerate regions.

Mentions: The definition of nondegenerate and degenerate regimes of GNR capacitance maybe understood through the position of Fermi energy, EF level in the energy band diagram, as illustrated in Figure 1. It is referred to as a nondegenerate regime when the Fermi level is located greater than 3 kBT in the energy gap, while the degenerate occurs if the Fermi level is located at 3 kBT within the energy band from either band edge.


Analytical performance of 3 m and 3 m +1 armchair graphene nanoribbons under uniaxial strain.

Kang ES, Ismail R - Nanoscale Res Lett (2014)

Energy band diagram showing the nondegenerate and degenerate regions.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4231444&req=5

Figure 1: Energy band diagram showing the nondegenerate and degenerate regions.
Mentions: The definition of nondegenerate and degenerate regimes of GNR capacitance maybe understood through the position of Fermi energy, EF level in the energy band diagram, as illustrated in Figure 1. It is referred to as a nondegenerate regime when the Fermi level is located greater than 3 kBT in the energy gap, while the degenerate occurs if the Fermi level is located at 3 kBT within the energy band from either band edge.

Bottom Line: Discrepancies between the classical calculation and quantum calculation were also measured.It has been found that as much as 19% of the drive current loss is due to the quantum confinement.These analytical models which agree well with the experimental and numerical results provide physical insights into the characterizations of uniaxial strained AGNRs.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Electronic and Computer Engineering, Southern University College, Skudai 81310, Johor Darul Takzim, Malaysia.

ABSTRACT
The electronic band structure and carrier density of strained armchair graphene nanoribbons (AGNRs) with widths of n =3 m and n =3 m +1 were examined using tight-binding approximation. The current-voltage (I-V) model of uniaxial strained n =3 m AGNRs incorporating quantum confinement effects is also presented in this paper. The derivation originates from energy dispersion throughout the entire Brillouin zone of uniaxial strained AGNRs based on a tight-binding approximation. Our results reveal the modification of the energy bandgap, carrier density, and drain current upon strain. Unlike the two-dimensional graphene, whose bandgap remains near to zero even when a large strain is applied, the bandgap and carrier density of AGNRs are shown to be sensitive to the magnitude of uniaxial strain. Discrepancies between the classical calculation and quantum calculation were also measured. It has been found that as much as 19% of the drive current loss is due to the quantum confinement. These analytical models which agree well with the experimental and numerical results provide physical insights into the characterizations of uniaxial strained AGNRs.

No MeSH data available.


Related in: MedlinePlus