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Synthesis and field emission studies of tower-like GaN nanowires.

Liu Y, Meng X, Wan X, Wang Z, Huang H, Long H, Song Z, Fang G - Nanoscale Res Lett (2014)

Bottom Line: Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition.The growth mechanism of the tower-like GaN nanowires was proposed.The field emission property of tower-like GaN nanowires was tested.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Artificial Micro-and Nanostructures Ministry of Education and School of Physics and Technology, Wuhan University, Luojia Hill, Wuhan 430072, Hubei, People's Republic of China.

ABSTRACT

Unlabelled: Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition. The tower-like nanowire consisted of a nanowire at the center and microcrystal layers stacked one by one around the nanowire. The tower-like nanowires grew along the [0001] direction, and the exposed surfaces of the microcrystal layers are [Formula: see text] and [Formula: see text] facets. The growth mechanism of the tower-like GaN nanowires was proposed. The field emission property of tower-like GaN nanowires was tested. Due to the sharp tips, nearly vertical alignment and rough surfaces caused by the microcrystal layers, the tower-like GaN nanowires show excellent performance in field emission with a turn-on field of 2.44 V/μm which is lower than those of other GaN one-dimensional (1D) nanomaterials.

Pacs: 81.15.Gh; 68.37.Lp; 68.37.Vj.

No MeSH data available.


Related in: MedlinePlus

The applied field dependence of the emission current density J and the corresponding Fowler-Nordheim plot. (a)J-E curves of the tower-like GaN nanowires grown for 10 and 40 min. (b) The corresponding Fowler-Nordheim plot.
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Figure 4: The applied field dependence of the emission current density J and the corresponding Fowler-Nordheim plot. (a)J-E curves of the tower-like GaN nanowires grown for 10 and 40 min. (b) The corresponding Fowler-Nordheim plot.

Mentions: Figure 4a shows the applied field dependence of the emission current density J of the GaN nanowires grown for 10 and 40 min, respectively. The applied field was sweeping from 0.24 to 3.70 Vμm-1 (applied voltage from 50 to 771 V) with anode-sample distance of 210 μm. The test was performed in a vacuum chamber under a pressure of 2 Pa at room temperature.


Synthesis and field emission studies of tower-like GaN nanowires.

Liu Y, Meng X, Wan X, Wang Z, Huang H, Long H, Song Z, Fang G - Nanoscale Res Lett (2014)

The applied field dependence of the emission current density J and the corresponding Fowler-Nordheim plot. (a)J-E curves of the tower-like GaN nanowires grown for 10 and 40 min. (b) The corresponding Fowler-Nordheim plot.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4231361&req=5

Figure 4: The applied field dependence of the emission current density J and the corresponding Fowler-Nordheim plot. (a)J-E curves of the tower-like GaN nanowires grown for 10 and 40 min. (b) The corresponding Fowler-Nordheim plot.
Mentions: Figure 4a shows the applied field dependence of the emission current density J of the GaN nanowires grown for 10 and 40 min, respectively. The applied field was sweeping from 0.24 to 3.70 Vμm-1 (applied voltage from 50 to 771 V) with anode-sample distance of 210 μm. The test was performed in a vacuum chamber under a pressure of 2 Pa at room temperature.

Bottom Line: Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition.The growth mechanism of the tower-like GaN nanowires was proposed.The field emission property of tower-like GaN nanowires was tested.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Artificial Micro-and Nanostructures Ministry of Education and School of Physics and Technology, Wuhan University, Luojia Hill, Wuhan 430072, Hubei, People's Republic of China.

ABSTRACT

Unlabelled: Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition. The tower-like nanowire consisted of a nanowire at the center and microcrystal layers stacked one by one around the nanowire. The tower-like nanowires grew along the [0001] direction, and the exposed surfaces of the microcrystal layers are [Formula: see text] and [Formula: see text] facets. The growth mechanism of the tower-like GaN nanowires was proposed. The field emission property of tower-like GaN nanowires was tested. Due to the sharp tips, nearly vertical alignment and rough surfaces caused by the microcrystal layers, the tower-like GaN nanowires show excellent performance in field emission with a turn-on field of 2.44 V/μm which is lower than those of other GaN one-dimensional (1D) nanomaterials.

Pacs: 81.15.Gh; 68.37.Lp; 68.37.Vj.

No MeSH data available.


Related in: MedlinePlus