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Capacitance effect on the oscillation and switching characteristics of spin torque oscillators.

Zeng T, Zhou Y, Leung CW, Lai PP, Pong PW - Nanoscale Res Lett (2014)

Bottom Line: The switching characteristic is featured with the emerging of the canted region; the canted region increases with the capacitance.When the external field is absent, the STO free-layer switching time exhibits different dependences on the capacitance for different injected current.These results help to establish the foundation for capacitance-involved STO modeling.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam, Hong Kong.

ABSTRACT
We have studied the capacitance effect on the oscillation characteristics and the switching characteristics of the spin torque oscillators (STOs). We found that when the external field is applied, the STO oscillation frequency exhibits various dependences on the capacitance for injected current ranging from 8 to 20 mA. The switching characteristic is featured with the emerging of the canted region; the canted region increases with the capacitance. When the external field is absent, the STO free-layer switching time exhibits different dependences on the capacitance for different injected current. These results help to establish the foundation for capacitance-involved STO modeling.

No MeSH data available.


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Schematic illustration of the spin torque oscillator. (a) Device structure. (b) Free-layer magnetization in spherical coordinates. (c) Sketch of a STO connected in parallel with a capacitor.
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Figure 1: Schematic illustration of the spin torque oscillator. (a) Device structure. (b) Free-layer magnetization in spherical coordinates. (c) Sketch of a STO connected in parallel with a capacitor.

Mentions: As shown in FigureĀ 1, a giant magnetoresistance (GMR)-based STO consisting of a fixed layer, a nonmagnetic layer, and a free layer is modeled with a capacitor connected in parallel. An ideal current source Idc is applied. The time evolution of the free-layer magnetization is described by the Landau-Lifshiz-Gilbert equation with Slonczewski spin torque term [2]


Capacitance effect on the oscillation and switching characteristics of spin torque oscillators.

Zeng T, Zhou Y, Leung CW, Lai PP, Pong PW - Nanoscale Res Lett (2014)

Schematic illustration of the spin torque oscillator. (a) Device structure. (b) Free-layer magnetization in spherical coordinates. (c) Sketch of a STO connected in parallel with a capacitor.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4230906&req=5

Figure 1: Schematic illustration of the spin torque oscillator. (a) Device structure. (b) Free-layer magnetization in spherical coordinates. (c) Sketch of a STO connected in parallel with a capacitor.
Mentions: As shown in FigureĀ 1, a giant magnetoresistance (GMR)-based STO consisting of a fixed layer, a nonmagnetic layer, and a free layer is modeled with a capacitor connected in parallel. An ideal current source Idc is applied. The time evolution of the free-layer magnetization is described by the Landau-Lifshiz-Gilbert equation with Slonczewski spin torque term [2]

Bottom Line: The switching characteristic is featured with the emerging of the canted region; the canted region increases with the capacitance.When the external field is absent, the STO free-layer switching time exhibits different dependences on the capacitance for different injected current.These results help to establish the foundation for capacitance-involved STO modeling.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam, Hong Kong.

ABSTRACT
We have studied the capacitance effect on the oscillation characteristics and the switching characteristics of the spin torque oscillators (STOs). We found that when the external field is applied, the STO oscillation frequency exhibits various dependences on the capacitance for injected current ranging from 8 to 20 mA. The switching characteristic is featured with the emerging of the canted region; the canted region increases with the capacitance. When the external field is absent, the STO free-layer switching time exhibits different dependences on the capacitance for different injected current. These results help to establish the foundation for capacitance-involved STO modeling.

No MeSH data available.


Related in: MedlinePlus