Limits...
Two-dimensional carrier distribution in top-gate polymer field-effect transistors: correlation between width of density of localized states and Urbach energy.

Kronemeijer AJ, Pecunia V, Venkateshvaran D, Nikolka M, Sadhanala A, Moriarty J, Szumilo M, Sirringhaus H - Adv. Mater. Weinheim (2013)

Bottom Line: A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors.A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors.

View Article: PubMed Central - PubMed

Affiliation: Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, United Kingdom.

No MeSH data available.


Related in: MedlinePlus

Correlation between the width of the DOS extracted from the FET transfer characteristics and the Urbach energy extracted from the PDS absorption spectra.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4230477&req=5

fig05: Correlation between the width of the DOS extracted from the FET transfer characteristics and the Urbach energy extracted from the PDS absorption spectra.

Mentions: Figure5 plots the T0 values as determined from the temperature-dependent FET measurements versus the extracted Urbach energy from the PDS measurements. In spite of the errors in the values of the Urbach energy a convincing case for a linear proportionality between the two parameters can still be made. This is not unexpected since both parameters are measures of the degree of energetic disorder in the films. The proportionality gives us confidence that the extracted T0 values have physical relevance and supports the above conclusion that the two-dimensional model is more appropriate to describe charge transport in top-gate polymer FETs than the three-dimensional model.


Two-dimensional carrier distribution in top-gate polymer field-effect transistors: correlation between width of density of localized states and Urbach energy.

Kronemeijer AJ, Pecunia V, Venkateshvaran D, Nikolka M, Sadhanala A, Moriarty J, Szumilo M, Sirringhaus H - Adv. Mater. Weinheim (2013)

Correlation between the width of the DOS extracted from the FET transfer characteristics and the Urbach energy extracted from the PDS absorption spectra.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4230477&req=5

fig05: Correlation between the width of the DOS extracted from the FET transfer characteristics and the Urbach energy extracted from the PDS absorption spectra.
Mentions: Figure5 plots the T0 values as determined from the temperature-dependent FET measurements versus the extracted Urbach energy from the PDS measurements. In spite of the errors in the values of the Urbach energy a convincing case for a linear proportionality between the two parameters can still be made. This is not unexpected since both parameters are measures of the degree of energetic disorder in the films. The proportionality gives us confidence that the extracted T0 values have physical relevance and supports the above conclusion that the two-dimensional model is more appropriate to describe charge transport in top-gate polymer FETs than the three-dimensional model.

Bottom Line: A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors.A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors.

View Article: PubMed Central - PubMed

Affiliation: Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, United Kingdom.

No MeSH data available.


Related in: MedlinePlus