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Two-dimensional carrier distribution in top-gate polymer field-effect transistors: correlation between width of density of localized states and Urbach energy.

Kronemeijer AJ, Pecunia V, Venkateshvaran D, Nikolka M, Sadhanala A, Moriarty J, Szumilo M, Sirringhaus H - Adv. Mater. Weinheim (2013)

Bottom Line: A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors.A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors.

View Article: PubMed Central - PubMed

Affiliation: Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, United Kingdom.

No MeSH data available.


Related in: MedlinePlus

Extracted values of γ plotted versus 1/T for FETs based on, from top-left to bottom-right: N2200 (n-type), P3HT, PBTTT and PTAA. The insets show the molecular structure of the polymer semiconductor and indicate the respective dielectric used for the FETs. The 2D nature of the charge distribution is confirmed by the vertical-axis intersection at γ = 1 and the value of T0 is derived from the slope.
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fig03: Extracted values of γ plotted versus 1/T for FETs based on, from top-left to bottom-right: N2200 (n-type), P3HT, PBTTT and PTAA. The insets show the molecular structure of the polymer semiconductor and indicate the respective dielectric used for the FETs. The 2D nature of the charge distribution is confirmed by the vertical-axis intersection at γ = 1 and the value of T0 is derived from the slope.

Mentions: Figure3 shows the constructed γ versus 1/T graphs for the other materials investigated in this work. All graphs show a vertical axis intersection at a value of 1, demonstrating the 2D carrier distribution profile is omnipresent in all fabricated polymer top-gate transistors, independent of the type of carrier (p-type vs. n-type) and specific dielectric used (PMMA vs. CYTOP). The original 3D Vissenberg-Matters expression, which would result in a vertical axis intercept of γ = 0, can therefore not be used to properly describe charge-transport in our top-gate polymer FETs. Rather, the solid lines in Figure 1a show a good fit of Equation (1) to the transfer characteristics. This is representative for all fabricated transistors.


Two-dimensional carrier distribution in top-gate polymer field-effect transistors: correlation between width of density of localized states and Urbach energy.

Kronemeijer AJ, Pecunia V, Venkateshvaran D, Nikolka M, Sadhanala A, Moriarty J, Szumilo M, Sirringhaus H - Adv. Mater. Weinheim (2013)

Extracted values of γ plotted versus 1/T for FETs based on, from top-left to bottom-right: N2200 (n-type), P3HT, PBTTT and PTAA. The insets show the molecular structure of the polymer semiconductor and indicate the respective dielectric used for the FETs. The 2D nature of the charge distribution is confirmed by the vertical-axis intersection at γ = 1 and the value of T0 is derived from the slope.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4230477&req=5

fig03: Extracted values of γ plotted versus 1/T for FETs based on, from top-left to bottom-right: N2200 (n-type), P3HT, PBTTT and PTAA. The insets show the molecular structure of the polymer semiconductor and indicate the respective dielectric used for the FETs. The 2D nature of the charge distribution is confirmed by the vertical-axis intersection at γ = 1 and the value of T0 is derived from the slope.
Mentions: Figure3 shows the constructed γ versus 1/T graphs for the other materials investigated in this work. All graphs show a vertical axis intersection at a value of 1, demonstrating the 2D carrier distribution profile is omnipresent in all fabricated polymer top-gate transistors, independent of the type of carrier (p-type vs. n-type) and specific dielectric used (PMMA vs. CYTOP). The original 3D Vissenberg-Matters expression, which would result in a vertical axis intercept of γ = 0, can therefore not be used to properly describe charge-transport in our top-gate polymer FETs. Rather, the solid lines in Figure 1a show a good fit of Equation (1) to the transfer characteristics. This is representative for all fabricated transistors.

Bottom Line: A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors.A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors.

View Article: PubMed Central - PubMed

Affiliation: Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, United Kingdom.

No MeSH data available.


Related in: MedlinePlus