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Two-dimensional carrier distribution in top-gate polymer field-effect transistors: correlation between width of density of localized states and Urbach energy.

Kronemeijer AJ, Pecunia V, Venkateshvaran D, Nikolka M, Sadhanala A, Moriarty J, Szumilo M, Sirringhaus H - Adv. Mater. Weinheim (2013)

Bottom Line: A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors.A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors.

View Article: PubMed Central - PubMed

Affiliation: Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, United Kingdom.

No MeSH data available.


Related in: MedlinePlus

(a) Experimental transfer characteristics of a PSeDPPDTT-based FET (L = 20 μm, W = 1000 μm) as a function of temperature. Solid lines are fits to Equation (1). (b) Replotted transfer characteristics of (a) on a double logarithmic scale. Solid lines are fits to extract the parameter γ for each temperature. (c) Extracted values of γ from (b) plotted versus 1/T. The extrapolated dashed linear fit yields the intersection with the vertical axis while the value of T0 is derived from the slope.
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fig02: (a) Experimental transfer characteristics of a PSeDPPDTT-based FET (L = 20 μm, W = 1000 μm) as a function of temperature. Solid lines are fits to Equation (1). (b) Replotted transfer characteristics of (a) on a double logarithmic scale. Solid lines are fits to extract the parameter γ for each temperature. (c) Extracted values of γ from (b) plotted versus 1/T. The extrapolated dashed linear fit yields the intersection with the vertical axis while the value of T0 is derived from the slope.

Mentions: Figure2a displays the measured transfer characteristics of FETs based on PSeDPPDTT as a function of temperature. The presented characteristics are representative for all fabricated transistors and extracted room-temperature mobility values and Arrhenius-type activation energies are summarized in Table1. As a first step in the further analysis of the charge transport, Figure 2b replots the transfer characteristics on a double logarithmic scale. Straight lines are obtained for all temperatures indicating a power-law dependence of the source-drain current as a function of gate bias. The exponent γ of the power-law is determined from the transfer curves for all distinct temperatures and is plotted in Figure 2c versus 1/T to conclude the simple analysis. A straight line is obtained once more. The extrapolated linear fit intersects with the vertical axis at a value of 1, indicative of the fact that the transfer characteristics are in accordance with Equation (1). This leads to the conclusion that the carrier distribution profile in the PSeDPPDTT top-gate transistors is two-dimensional.


Two-dimensional carrier distribution in top-gate polymer field-effect transistors: correlation between width of density of localized states and Urbach energy.

Kronemeijer AJ, Pecunia V, Venkateshvaran D, Nikolka M, Sadhanala A, Moriarty J, Szumilo M, Sirringhaus H - Adv. Mater. Weinheim (2013)

(a) Experimental transfer characteristics of a PSeDPPDTT-based FET (L = 20 μm, W = 1000 μm) as a function of temperature. Solid lines are fits to Equation (1). (b) Replotted transfer characteristics of (a) on a double logarithmic scale. Solid lines are fits to extract the parameter γ for each temperature. (c) Extracted values of γ from (b) plotted versus 1/T. The extrapolated dashed linear fit yields the intersection with the vertical axis while the value of T0 is derived from the slope.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4230477&req=5

fig02: (a) Experimental transfer characteristics of a PSeDPPDTT-based FET (L = 20 μm, W = 1000 μm) as a function of temperature. Solid lines are fits to Equation (1). (b) Replotted transfer characteristics of (a) on a double logarithmic scale. Solid lines are fits to extract the parameter γ for each temperature. (c) Extracted values of γ from (b) plotted versus 1/T. The extrapolated dashed linear fit yields the intersection with the vertical axis while the value of T0 is derived from the slope.
Mentions: Figure2a displays the measured transfer characteristics of FETs based on PSeDPPDTT as a function of temperature. The presented characteristics are representative for all fabricated transistors and extracted room-temperature mobility values and Arrhenius-type activation energies are summarized in Table1. As a first step in the further analysis of the charge transport, Figure 2b replots the transfer characteristics on a double logarithmic scale. Straight lines are obtained for all temperatures indicating a power-law dependence of the source-drain current as a function of gate bias. The exponent γ of the power-law is determined from the transfer curves for all distinct temperatures and is plotted in Figure 2c versus 1/T to conclude the simple analysis. A straight line is obtained once more. The extrapolated linear fit intersects with the vertical axis at a value of 1, indicative of the fact that the transfer characteristics are in accordance with Equation (1). This leads to the conclusion that the carrier distribution profile in the PSeDPPDTT top-gate transistors is two-dimensional.

Bottom Line: A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors.A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors.

View Article: PubMed Central - PubMed

Affiliation: Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, United Kingdom.

No MeSH data available.


Related in: MedlinePlus