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Dielectric relaxation of high-k oxides.

Zhao C, Zhao CZ, Werner M, Taylor S, Chalker P - Nanoscale Res Lett (2013)

Bottom Line: Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics.For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material.The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK. cezhou.zhao@xjtlu.edu.cn.

ABSTRACT
Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary.

No MeSH data available.


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Physical mechanisms of dielectric relaxation in real and imaginary parts [[85]].
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Figure 7: Physical mechanisms of dielectric relaxation in real and imaginary parts [[85]].

Mentions: A dielectric material is a non-conducting substance whose bound charges are polarized under the influence of an externally applied electric field. The dielectric behavior must be specified with respect to the time or frequency domain. Different mechanisms show different dynamic behavior in time domain. In consequence, adsorption occurs at different windows in frequency domain. For the physical mechanism of the dielectric relaxation, FigureĀ 7 is to describe the degree of polarization in a given material within frequency domain [85].


Dielectric relaxation of high-k oxides.

Zhao C, Zhao CZ, Werner M, Taylor S, Chalker P - Nanoscale Res Lett (2013)

Physical mechanisms of dielectric relaxation in real and imaginary parts [[85]].
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4228250&req=5

Figure 7: Physical mechanisms of dielectric relaxation in real and imaginary parts [[85]].
Mentions: A dielectric material is a non-conducting substance whose bound charges are polarized under the influence of an externally applied electric field. The dielectric behavior must be specified with respect to the time or frequency domain. Different mechanisms show different dynamic behavior in time domain. In consequence, adsorption occurs at different windows in frequency domain. For the physical mechanism of the dielectric relaxation, FigureĀ 7 is to describe the degree of polarization in a given material within frequency domain [85].

Bottom Line: Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics.For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material.The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK. cezhou.zhao@xjtlu.edu.cn.

ABSTRACT
Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary.

No MeSH data available.


Related in: MedlinePlus