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Dielectric relaxation of high-k oxides.

Zhao C, Zhao CZ, Werner M, Taylor S, Chalker P - Nanoscale Res Lett (2013)

Bottom Line: Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics.For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material.The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary.

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Affiliation: Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK. cezhou.zhao@xjtlu.edu.cn.

ABSTRACT
Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary.

No MeSH data available.


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Dielectric relaxation results of as-deposited and annealed La0.35Zr0.65O2samples [[54]].
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Figure 4: Dielectric relaxation results of as-deposited and annealed La0.35Zr0.65O2samples [[54]].

Mentions: Based on the discussion above, the dielectric relaxation results of La0.35Zr0.65O2 for the as-deposited and PDA samples (shown in Figure 4) have been modeled with the CS and/or HN relationships (see solid lines in Figure 4) [54]. The relaxation of the as-deposited film obeyed a combined CS + HN law. After the 900°C PDA, the relaxation behavior of the N2-annealed film was dominated by the CS law, whereas the air-annealed film was predominantly modeled by the HN relationship that was accompanied by a sharp drop in the k value.


Dielectric relaxation of high-k oxides.

Zhao C, Zhao CZ, Werner M, Taylor S, Chalker P - Nanoscale Res Lett (2013)

Dielectric relaxation results of as-deposited and annealed La0.35Zr0.65O2samples [[54]].
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4228250&req=5

Figure 4: Dielectric relaxation results of as-deposited and annealed La0.35Zr0.65O2samples [[54]].
Mentions: Based on the discussion above, the dielectric relaxation results of La0.35Zr0.65O2 for the as-deposited and PDA samples (shown in Figure 4) have been modeled with the CS and/or HN relationships (see solid lines in Figure 4) [54]. The relaxation of the as-deposited film obeyed a combined CS + HN law. After the 900°C PDA, the relaxation behavior of the N2-annealed film was dominated by the CS law, whereas the air-annealed film was predominantly modeled by the HN relationship that was accompanied by a sharp drop in the k value.

Bottom Line: Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics.For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material.The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK. cezhou.zhao@xjtlu.edu.cn.

ABSTRACT
Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary.

No MeSH data available.


Related in: MedlinePlus