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Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography.

Cui L, Han JC, Wang GG, Zhang HY, Sun R, Li LH - Nanoscale Res Lett (2013)

Bottom Line: The first comprised a low-temperature oxidation anneal at 450°C for 24 h.This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer.The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C.

View Article: PubMed Central - HTML - PubMed

Affiliation: Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China. cuilin0512@gmail.com.

ABSTRACT
Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography.

No MeSH data available.


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SEM images of the morphology of PDMS soft mold molding. From the quartz master (a), patterned AMONIL-MMS4 (b), and patterned Al thin films obtained by the UV-NIL and RIE (c).
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Figure 3: SEM images of the morphology of PDMS soft mold molding. From the quartz master (a), patterned AMONIL-MMS4 (b), and patterned Al thin films obtained by the UV-NIL and RIE (c).

Mentions: Top-view SEM micrograph of soft mold (PDMS diluted with toluene) molding from the quartz master is shown in Figure 3a. As shown in Figure 3a, the patterned PDMS with 550-nm-wide lines separated by 250-nm space were obtained on the surface. The result of the UV curing imprinted pattern used by the replicated soft PDMS mold on the quartz master is shown in Figure 3b. It is easily seen that the patterned AMONIL-MMS4 with 250-nm-wide and 120-nm-long lines separated by 550-nm space was obtained on the Al thin film surface, which is coincident with that of the quartz master. The residual polymer layer with 60-nm thickness was removed by RIE. The patterns were subsequently transferred into Al thin films by RIE. Top-view SEM micrograph of patterned Al thin films obtained by the UV-NIL and RIE is shown in Figure 3c. As shown in Figure 3c, the patterned Al thin films with 250-nm-wide lines separated by 550-nm space were obtained on the sapphire surface, which is coincident with that of the quartz master.


Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography.

Cui L, Han JC, Wang GG, Zhang HY, Sun R, Li LH - Nanoscale Res Lett (2013)

SEM images of the morphology of PDMS soft mold molding. From the quartz master (a), patterned AMONIL-MMS4 (b), and patterned Al thin films obtained by the UV-NIL and RIE (c).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4225748&req=5

Figure 3: SEM images of the morphology of PDMS soft mold molding. From the quartz master (a), patterned AMONIL-MMS4 (b), and patterned Al thin films obtained by the UV-NIL and RIE (c).
Mentions: Top-view SEM micrograph of soft mold (PDMS diluted with toluene) molding from the quartz master is shown in Figure 3a. As shown in Figure 3a, the patterned PDMS with 550-nm-wide lines separated by 250-nm space were obtained on the surface. The result of the UV curing imprinted pattern used by the replicated soft PDMS mold on the quartz master is shown in Figure 3b. It is easily seen that the patterned AMONIL-MMS4 with 250-nm-wide and 120-nm-long lines separated by 550-nm space was obtained on the Al thin film surface, which is coincident with that of the quartz master. The residual polymer layer with 60-nm thickness was removed by RIE. The patterns were subsequently transferred into Al thin films by RIE. Top-view SEM micrograph of patterned Al thin films obtained by the UV-NIL and RIE is shown in Figure 3c. As shown in Figure 3c, the patterned Al thin films with 250-nm-wide lines separated by 550-nm space were obtained on the sapphire surface, which is coincident with that of the quartz master.

Bottom Line: The first comprised a low-temperature oxidation anneal at 450°C for 24 h.This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer.The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C.

View Article: PubMed Central - HTML - PubMed

Affiliation: Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China. cuilin0512@gmail.com.

ABSTRACT
Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography.

No MeSH data available.


Related in: MedlinePlus