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Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography.

Cui L, Han JC, Wang GG, Zhang HY, Sun R, Li LH - Nanoscale Res Lett (2013)

Bottom Line: The first comprised a low-temperature oxidation anneal at 450°C for 24 h.This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer.The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C.

View Article: PubMed Central - HTML - PubMed

Affiliation: Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China. cuilin0512@gmail.com.

ABSTRACT
Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography.

No MeSH data available.


Schematic diagram showing processing steps in the generation of large-scale NPSS.
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Figure 1: Schematic diagram showing processing steps in the generation of large-scale NPSS.

Mentions: The process of large-scale NPSS consisted of the following steps (Figure 1): (a) 150-nm Al thin films were deposited on sapphire (0001) substrates, (b) UV-NIL resist, (c) peeled off PDMS soft mold, (d) patterned Al thin films were obtained with the RIE process, (e) oxide-patterned Al thin films, and (f) grain growth of patterned polycrystalline alumina thin films.


Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography.

Cui L, Han JC, Wang GG, Zhang HY, Sun R, Li LH - Nanoscale Res Lett (2013)

Schematic diagram showing processing steps in the generation of large-scale NPSS.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4225748&req=5

Figure 1: Schematic diagram showing processing steps in the generation of large-scale NPSS.
Mentions: The process of large-scale NPSS consisted of the following steps (Figure 1): (a) 150-nm Al thin films were deposited on sapphire (0001) substrates, (b) UV-NIL resist, (c) peeled off PDMS soft mold, (d) patterned Al thin films were obtained with the RIE process, (e) oxide-patterned Al thin films, and (f) grain growth of patterned polycrystalline alumina thin films.

Bottom Line: The first comprised a low-temperature oxidation anneal at 450°C for 24 h.This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer.The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C.

View Article: PubMed Central - HTML - PubMed

Affiliation: Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China. cuilin0512@gmail.com.

ABSTRACT
Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography.

No MeSH data available.