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Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.

Lee S, Sangle A, Lu P, Chen A, Zhang W, Lee JS, Wang H, Jia Q, MacManus-Driscoll JL - Adv. Mater. Weinheim (2014)

Bottom Line: The strategy is to design vertical interfaces using two structurally incompatible oxides, which are likely to generate a high-concentration oxygen vacancy.Non-linear electroresistance at room temperature is demonstrated using these nano scaffold devices.The resistance variations exceed two orders of magnitude with very high uniformity and tunability.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.

No MeSH data available.


Related in: MedlinePlus

Local conduction of thermally activated Vo¨ at the vertical heterointerface of SrTiO3 matrix and Sm2O3 nanocolumn. a) I–V curves at interface (triangles) and inside nanocolumn (squares) using conductive AFM. The inset shows the surface topography. b) Conductance of nanoscaffold SrTiO3-Sm2O3 film (circles), single SrTiO3 (triangles) and Sm2O3 (squares) thin films for T-variation from 20 to 550 °C. c) Nonlinear transient times τ for high-to-low resistance switching. d) Thermally activated behavior of τ for T-variation from 18 to 70 °C. e) Film thickness dependence of Vp-τ relationship.
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fig04: Local conduction of thermally activated Vo¨ at the vertical heterointerface of SrTiO3 matrix and Sm2O3 nanocolumn. a) I–V curves at interface (triangles) and inside nanocolumn (squares) using conductive AFM. The inset shows the surface topography. b) Conductance of nanoscaffold SrTiO3-Sm2O3 film (circles), single SrTiO3 (triangles) and Sm2O3 (squares) thin films for T-variation from 20 to 550 °C. c) Nonlinear transient times τ for high-to-low resistance switching. d) Thermally activated behavior of τ for T-variation from 18 to 70 °C. e) Film thickness dependence of Vp-τ relationship.

Mentions: To extract local information about the current flow path through the nanoscaffold SrTiO3-Sm2O3 films, we recorded a current–voltage (I–V) curve using conductive atomic force microscopy with high lateral resolution. Unlike multilayers where interfaces are buried (Figure 1c), in nanoscaffold structure the interfaces are accessible from the electrical contact25 and so we can easily probe the physical properties of the vertical interfaces. To distinguish between the interface and the nanocolumn of the studied sample, we first acquired the surface topography, as shown in the inset of Figure4a. We then placed the Pt-coated tip at positions on the interface and on the nanocolumn, and swept the voltage from –10 V to 10 V in spectroscopic mode to record I–V curves at each position. As clearly shown in Figure 4a, the high conductivity is detected only at the interface (triangles), while both nanocolumn (squares) and matrix are insulating. In addition, we compared the conductance of the nanoscaffold SrTiO3-Sm2O3 film with that of single SrTiO3 and Sm2O3 films in the 20 to 550 °C temperature range. As shown in Figure 4b, the nanoscaffold SrTiO3-Sm2O3 films (circles) show a markedly increased conductance for the entire temperature range, compared to the single SrTiO3 (triangles) and Sm2O3 (squares) films. Both results indicate that a high concentration of Vo¨ along the vertical interfaces can result in local current flow paths. Considering the narrow interfaces of ∼2-nm-width, the resistive switching behavior illustrated in nanoscaffold structures can potentially lead to a memory density of 40 Tb/in2.


Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.

Lee S, Sangle A, Lu P, Chen A, Zhang W, Lee JS, Wang H, Jia Q, MacManus-Driscoll JL - Adv. Mater. Weinheim (2014)

Local conduction of thermally activated Vo¨ at the vertical heterointerface of SrTiO3 matrix and Sm2O3 nanocolumn. a) I–V curves at interface (triangles) and inside nanocolumn (squares) using conductive AFM. The inset shows the surface topography. b) Conductance of nanoscaffold SrTiO3-Sm2O3 film (circles), single SrTiO3 (triangles) and Sm2O3 (squares) thin films for T-variation from 20 to 550 °C. c) Nonlinear transient times τ for high-to-low resistance switching. d) Thermally activated behavior of τ for T-variation from 18 to 70 °C. e) Film thickness dependence of Vp-τ relationship.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4225682&req=5

fig04: Local conduction of thermally activated Vo¨ at the vertical heterointerface of SrTiO3 matrix and Sm2O3 nanocolumn. a) I–V curves at interface (triangles) and inside nanocolumn (squares) using conductive AFM. The inset shows the surface topography. b) Conductance of nanoscaffold SrTiO3-Sm2O3 film (circles), single SrTiO3 (triangles) and Sm2O3 (squares) thin films for T-variation from 20 to 550 °C. c) Nonlinear transient times τ for high-to-low resistance switching. d) Thermally activated behavior of τ for T-variation from 18 to 70 °C. e) Film thickness dependence of Vp-τ relationship.
Mentions: To extract local information about the current flow path through the nanoscaffold SrTiO3-Sm2O3 films, we recorded a current–voltage (I–V) curve using conductive atomic force microscopy with high lateral resolution. Unlike multilayers where interfaces are buried (Figure 1c), in nanoscaffold structure the interfaces are accessible from the electrical contact25 and so we can easily probe the physical properties of the vertical interfaces. To distinguish between the interface and the nanocolumn of the studied sample, we first acquired the surface topography, as shown in the inset of Figure4a. We then placed the Pt-coated tip at positions on the interface and on the nanocolumn, and swept the voltage from –10 V to 10 V in spectroscopic mode to record I–V curves at each position. As clearly shown in Figure 4a, the high conductivity is detected only at the interface (triangles), while both nanocolumn (squares) and matrix are insulating. In addition, we compared the conductance of the nanoscaffold SrTiO3-Sm2O3 film with that of single SrTiO3 and Sm2O3 films in the 20 to 550 °C temperature range. As shown in Figure 4b, the nanoscaffold SrTiO3-Sm2O3 films (circles) show a markedly increased conductance for the entire temperature range, compared to the single SrTiO3 (triangles) and Sm2O3 (squares) films. Both results indicate that a high concentration of Vo¨ along the vertical interfaces can result in local current flow paths. Considering the narrow interfaces of ∼2-nm-width, the resistive switching behavior illustrated in nanoscaffold structures can potentially lead to a memory density of 40 Tb/in2.

Bottom Line: The strategy is to design vertical interfaces using two structurally incompatible oxides, which are likely to generate a high-concentration oxygen vacancy.Non-linear electroresistance at room temperature is demonstrated using these nano scaffold devices.The resistance variations exceed two orders of magnitude with very high uniformity and tunability.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.

No MeSH data available.


Related in: MedlinePlus