Limits...
Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application.

Chin FT, Lin YH, You HC, Yang WL, Lin LM, Hsiao YP, Ko CM, Chao TS - Nanoscale Res Lett (2014)

Bottom Line: As the Cu CDT processing time increased, the forming and set voltages of the CDT-fabricated Cu/SiO2-stacked ReRAM decreased.Conversely, decreasing the processing time reduced the on-state current and reset voltage while increasing the endurance switching cycle time.Therefore, the switching characteristics were easily modulated by Cu CDT, yielding a high performance electrochemical metallization (ECM)-type ReRAM.

View Article: PubMed Central - HTML - PubMed

Affiliation: Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, No. 100 Wenhwa Rd., Seatwen, Taichung 40724, Taiwan.

ABSTRACT
This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO2-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insulator, the switching layer thickness, and the immunity of the Cu etching process, assisting the 1-transistor-1-ReRAM (1T-1R) structure and system-on-chip integration. The modulated shape of the Cu-SiO2 interface and the thickness of the SiO2 layer obtained by CDT-based Cu deposition on SiO2 were confirmed by scanning electron microscopy and atomic force microscopy. The CDT-fabricated Cu/SiO2-stacked ReRAM exhibited lower operation voltages and more stable data retention characteristics than the control Cu/SiO2-stacked sample. As the Cu CDT processing time increased, the forming and set voltages of the CDT-fabricated Cu/SiO2-stacked ReRAM decreased. Conversely, decreasing the processing time reduced the on-state current and reset voltage while increasing the endurance switching cycle time. Therefore, the switching characteristics were easily modulated by Cu CDT, yielding a high performance electrochemical metallization (ECM)-type ReRAM.

No MeSH data available.


Cell-to-cell distributions of switching voltages in CDT-fabricated Cu/SiO2-stacked (CDT sample) ReRAM. Box plot statistics showing the distribution of set and reset voltages.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4214826&req=5

Figure 5: Cell-to-cell distributions of switching voltages in CDT-fabricated Cu/SiO2-stacked (CDT sample) ReRAM. Box plot statistics showing the distribution of set and reset voltages.

Mentions: The cell-to-cell distributions of switching voltages in the CDT samples are illustrated in FigureĀ 5. Twenty devices were measured to plot the set and reset voltages. The sample fabricated over a short period demonstrated a more uniform set operation voltage. This is attributed to the thin Cu conductive filaments in the SiO2 switching layer. The switching gap area is smaller in thin Cu conductive filaments than in their thick counterparts [12]. During the set process, the Cu ions are easily guided along the direction of the electric field in an area of small switching gap. This phenomenon explains the enhanced uniformity of the set operation voltage distribution in CDT samples fabricated over shorter times.


Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application.

Chin FT, Lin YH, You HC, Yang WL, Lin LM, Hsiao YP, Ko CM, Chao TS - Nanoscale Res Lett (2014)

Cell-to-cell distributions of switching voltages in CDT-fabricated Cu/SiO2-stacked (CDT sample) ReRAM. Box plot statistics showing the distribution of set and reset voltages.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4214826&req=5

Figure 5: Cell-to-cell distributions of switching voltages in CDT-fabricated Cu/SiO2-stacked (CDT sample) ReRAM. Box plot statistics showing the distribution of set and reset voltages.
Mentions: The cell-to-cell distributions of switching voltages in the CDT samples are illustrated in FigureĀ 5. Twenty devices were measured to plot the set and reset voltages. The sample fabricated over a short period demonstrated a more uniform set operation voltage. This is attributed to the thin Cu conductive filaments in the SiO2 switching layer. The switching gap area is smaller in thin Cu conductive filaments than in their thick counterparts [12]. During the set process, the Cu ions are easily guided along the direction of the electric field in an area of small switching gap. This phenomenon explains the enhanced uniformity of the set operation voltage distribution in CDT samples fabricated over shorter times.

Bottom Line: As the Cu CDT processing time increased, the forming and set voltages of the CDT-fabricated Cu/SiO2-stacked ReRAM decreased.Conversely, decreasing the processing time reduced the on-state current and reset voltage while increasing the endurance switching cycle time.Therefore, the switching characteristics were easily modulated by Cu CDT, yielding a high performance electrochemical metallization (ECM)-type ReRAM.

View Article: PubMed Central - HTML - PubMed

Affiliation: Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, No. 100 Wenhwa Rd., Seatwen, Taichung 40724, Taiwan.

ABSTRACT
This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO2-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insulator, the switching layer thickness, and the immunity of the Cu etching process, assisting the 1-transistor-1-ReRAM (1T-1R) structure and system-on-chip integration. The modulated shape of the Cu-SiO2 interface and the thickness of the SiO2 layer obtained by CDT-based Cu deposition on SiO2 were confirmed by scanning electron microscopy and atomic force microscopy. The CDT-fabricated Cu/SiO2-stacked ReRAM exhibited lower operation voltages and more stable data retention characteristics than the control Cu/SiO2-stacked sample. As the Cu CDT processing time increased, the forming and set voltages of the CDT-fabricated Cu/SiO2-stacked ReRAM decreased. Conversely, decreasing the processing time reduced the on-state current and reset voltage while increasing the endurance switching cycle time. Therefore, the switching characteristics were easily modulated by Cu CDT, yielding a high performance electrochemical metallization (ECM)-type ReRAM.

No MeSH data available.