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Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors.

Li L, Nakamura R, Wang Q, Jiang Y, Ao JP - Nanoscale Res Lett (2014)

Bottom Line: The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios.The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min.Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan.

ABSTRACT
In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

No MeSH data available.


Related in: MedlinePlus

Current-voltage characteristics (a) and transfer characteristics (b) of the self-aligned gated AlGaN/GaN HFETs. The blue line is the Gm, and the black one is the drain current.
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Figure 6: Current-voltage characteristics (a) and transfer characteristics (b) of the self-aligned gated AlGaN/GaN HFETs. The blue line is the Gm, and the black one is the drain current.

Mentions: The I-V characteristics of HFETs show that the device with SAG structure can operate very well when the gate voltage is swept from −4 to 1 V, with a threshold voltage of about −4 V and a maximum drain current density of 540 mA/mm (Figure 6a). The transfer characteristic of the device (Figure 6b) shows that the transconductance is about 160 mS/mm. However, the surface of the electrode after annealing is rough due to the ball-up of the Au layer. More careful optimization is required to improve the morphology.


Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors.

Li L, Nakamura R, Wang Q, Jiang Y, Ao JP - Nanoscale Res Lett (2014)

Current-voltage characteristics (a) and transfer characteristics (b) of the self-aligned gated AlGaN/GaN HFETs. The blue line is the Gm, and the black one is the drain current.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4214824&req=5

Figure 6: Current-voltage characteristics (a) and transfer characteristics (b) of the self-aligned gated AlGaN/GaN HFETs. The blue line is the Gm, and the black one is the drain current.
Mentions: The I-V characteristics of HFETs show that the device with SAG structure can operate very well when the gate voltage is swept from −4 to 1 V, with a threshold voltage of about −4 V and a maximum drain current density of 540 mA/mm (Figure 6a). The transfer characteristic of the device (Figure 6b) shows that the transconductance is about 160 mS/mm. However, the surface of the electrode after annealing is rough due to the ball-up of the Au layer. More careful optimization is required to improve the morphology.

Bottom Line: The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios.The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min.Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan.

ABSTRACT
In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

No MeSH data available.


Related in: MedlinePlus