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Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors.

Li L, Nakamura R, Wang Q, Jiang Y, Ao JP - Nanoscale Res Lett (2014)

Bottom Line: The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios.The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min.Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan.

ABSTRACT
In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

No MeSH data available.


Related in: MedlinePlus

SEM pictures of the T-gate on silicon (a) and the AlGaN/GaN HFET device (b). S, source; G, gate; D, drain.
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Figure 5: SEM pictures of the T-gate on silicon (a) and the AlGaN/GaN HFET device (b). S, source; G, gate; D, drain.

Mentions: The cross-sectional view of the TiN-gated devices fabricated by the gate-first process is shown in Figure 3b. Figure 5a is the scanning electron micrograph (SEM) picture of the T-gate on silicon substrate, with a cross-sectional foot width of about 500 nm and a head width of about 2 μm. The AlGaN/GaN HFETs with SAG structure is also shown in Figure 5b, with a cross-sectional foot width of about 500 nm and a head width of about 4 μm. The width of the upper layer was enlarged slightly due to the changed conditions on the AlGaN/GaN HFETs substrate.


Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors.

Li L, Nakamura R, Wang Q, Jiang Y, Ao JP - Nanoscale Res Lett (2014)

SEM pictures of the T-gate on silicon (a) and the AlGaN/GaN HFET device (b). S, source; G, gate; D, drain.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4214824&req=5

Figure 5: SEM pictures of the T-gate on silicon (a) and the AlGaN/GaN HFET device (b). S, source; G, gate; D, drain.
Mentions: The cross-sectional view of the TiN-gated devices fabricated by the gate-first process is shown in Figure 3b. Figure 5a is the scanning electron micrograph (SEM) picture of the T-gate on silicon substrate, with a cross-sectional foot width of about 500 nm and a head width of about 2 μm. The AlGaN/GaN HFETs with SAG structure is also shown in Figure 5b, with a cross-sectional foot width of about 500 nm and a head width of about 4 μm. The width of the upper layer was enlarged slightly due to the changed conditions on the AlGaN/GaN HFETs substrate.

Bottom Line: The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios.The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min.Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan.

ABSTRACT
In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

No MeSH data available.


Related in: MedlinePlus