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Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors.

Li L, Nakamura R, Wang Q, Jiang Y, Ao JP - Nanoscale Res Lett (2014)

Bottom Line: The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios.The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min.Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan.

ABSTRACT
In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

No MeSH data available.


Related in: MedlinePlus

I-V characteristics and linear plot. The I-V characteristics of the TiN Schottky diodes deposited with different N2/Ar ratios (a) and linear plot in the forward region (b).
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Figure 2: I-V characteristics and linear plot. The I-V characteristics of the TiN Schottky diodes deposited with different N2/Ar ratios (a) and linear plot in the forward region (b).

Mentions: The current-voltage (I-V) characteristics of the sample with a pure Ti contact show an ohmic-like contact with a reverse leakage current quite similar to the forward current. The I-V curves of the other TiN contact samples are comparable to each other, showing good rectification characteristics and a reverse leakage current of approximately 10−5 A (Figure 2a). The average SBH calculated from the thermionic emission theory for the samples created with different N2/Ar sputtering gas ratio is around 0.5 to 0.6 eV, with ideality factors that range from 1.05 ~ 1.4 [10]. Examination of the AFM and XPS implies that the possession of similar film structure and composition causes the work function and SBH of the TiN to be essentially independent of the N2/Ar sputtering gas ratio [10].


Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors.

Li L, Nakamura R, Wang Q, Jiang Y, Ao JP - Nanoscale Res Lett (2014)

I-V characteristics and linear plot. The I-V characteristics of the TiN Schottky diodes deposited with different N2/Ar ratios (a) and linear plot in the forward region (b).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4214824&req=5

Figure 2: I-V characteristics and linear plot. The I-V characteristics of the TiN Schottky diodes deposited with different N2/Ar ratios (a) and linear plot in the forward region (b).
Mentions: The current-voltage (I-V) characteristics of the sample with a pure Ti contact show an ohmic-like contact with a reverse leakage current quite similar to the forward current. The I-V curves of the other TiN contact samples are comparable to each other, showing good rectification characteristics and a reverse leakage current of approximately 10−5 A (Figure 2a). The average SBH calculated from the thermionic emission theory for the samples created with different N2/Ar sputtering gas ratio is around 0.5 to 0.6 eV, with ideality factors that range from 1.05 ~ 1.4 [10]. Examination of the AFM and XPS implies that the possession of similar film structure and composition causes the work function and SBH of the TiN to be essentially independent of the N2/Ar sputtering gas ratio [10].

Bottom Line: The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios.The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min.Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan.

ABSTRACT
In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

No MeSH data available.


Related in: MedlinePlus