Limits...
Evaluation of mobility in thin Bi2Se3 topological insulator for prospects of local electrical interconnects.

Gupta G, Jalil MB, Liang G - Sci Rep (2014)

Bottom Line: We, therefore via full real-space simulation, examine the feasibility of using thin 3D-TI (Bi2Se3) wire for the local electrical interconnects in the presence of edge roughness, vacancies, acoustic phonons and charge impurities across temperature and Fermi-level by simulating quantum transport through Non-Equilibrium Green Function algorithm.We found that because of the scattering induced by the acoustic phonons, the mobility reduces considerably at the room temperature which complemented with the low density of states near Dirac-point does not position Bi2Se3 3D-TI as a promising material to replace Cu for local interconnects.Properties required in suitable TI material for this application have also been discussed.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576.

ABSTRACT
Three-dimensional (3D) topological insulator (TI) has been conjectured as an emerging material to replace copper (Cu) as an interconnect material because of the suppression of elastic scattering from doping and charge impurities for carrier transport on TI surface. We, therefore via full real-space simulation, examine the feasibility of using thin 3D-TI (Bi2Se3) wire for the local electrical interconnects in the presence of edge roughness, vacancies, acoustic phonons and charge impurities across temperature and Fermi-level by simulating quantum transport through Non-Equilibrium Green Function algorithm. We found that because of the scattering induced by the acoustic phonons, the mobility reduces considerably at the room temperature which complemented with the low density of states near Dirac-point does not position Bi2Se3 3D-TI as a promising material to replace Cu for local interconnects. Properties required in suitable TI material for this application have also been discussed.

No MeSH data available.


Related in: MedlinePlus

Effective mobility in presence of all the defects (Phonons + 10% Edge Roughness + 5 × 1018/cm3 Charge Impurities + 5 × 1018/cm3 vacancies) as described by Matthiessen's rule (see eq. (4)) for different Fermi-Levels.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4213797&req=5

f4: Effective mobility in presence of all the defects (Phonons + 10% Edge Roughness + 5 × 1018/cm3 Charge Impurities + 5 × 1018/cm3 vacancies) as described by Matthiessen's rule (see eq. (4)) for different Fermi-Levels.

Mentions: Some of the key properties being sought in a material to replace Cu as the electrical interconnect at the room temperature are high mobility, passivity to edge roughness and defects. Therefore, each of these has been individually examined in Fig. 3, and finally the collective effects of all the defects and phonons have been put together in Fig. 4 and Fig. 5 to appraise the prospects of 3D-TI for interconnects.


Evaluation of mobility in thin Bi2Se3 topological insulator for prospects of local electrical interconnects.

Gupta G, Jalil MB, Liang G - Sci Rep (2014)

Effective mobility in presence of all the defects (Phonons + 10% Edge Roughness + 5 × 1018/cm3 Charge Impurities + 5 × 1018/cm3 vacancies) as described by Matthiessen's rule (see eq. (4)) for different Fermi-Levels.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4213797&req=5

f4: Effective mobility in presence of all the defects (Phonons + 10% Edge Roughness + 5 × 1018/cm3 Charge Impurities + 5 × 1018/cm3 vacancies) as described by Matthiessen's rule (see eq. (4)) for different Fermi-Levels.
Mentions: Some of the key properties being sought in a material to replace Cu as the electrical interconnect at the room temperature are high mobility, passivity to edge roughness and defects. Therefore, each of these has been individually examined in Fig. 3, and finally the collective effects of all the defects and phonons have been put together in Fig. 4 and Fig. 5 to appraise the prospects of 3D-TI for interconnects.

Bottom Line: We, therefore via full real-space simulation, examine the feasibility of using thin 3D-TI (Bi2Se3) wire for the local electrical interconnects in the presence of edge roughness, vacancies, acoustic phonons and charge impurities across temperature and Fermi-level by simulating quantum transport through Non-Equilibrium Green Function algorithm.We found that because of the scattering induced by the acoustic phonons, the mobility reduces considerably at the room temperature which complemented with the low density of states near Dirac-point does not position Bi2Se3 3D-TI as a promising material to replace Cu for local interconnects.Properties required in suitable TI material for this application have also been discussed.

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576.

ABSTRACT
Three-dimensional (3D) topological insulator (TI) has been conjectured as an emerging material to replace copper (Cu) as an interconnect material because of the suppression of elastic scattering from doping and charge impurities for carrier transport on TI surface. We, therefore via full real-space simulation, examine the feasibility of using thin 3D-TI (Bi2Se3) wire for the local electrical interconnects in the presence of edge roughness, vacancies, acoustic phonons and charge impurities across temperature and Fermi-level by simulating quantum transport through Non-Equilibrium Green Function algorithm. We found that because of the scattering induced by the acoustic phonons, the mobility reduces considerably at the room temperature which complemented with the low density of states near Dirac-point does not position Bi2Se3 3D-TI as a promising material to replace Cu for local interconnects. Properties required in suitable TI material for this application have also been discussed.

No MeSH data available.


Related in: MedlinePlus