Limits...
Semitransparent inverted polymer solar cells employing a sol-gel-derived TiO2 electron-selective layer on FTO and MoO3/Ag/MoO3 transparent electrode.

Li F, Chen C, Tan F, Li C, Yue G, Shen L, Zhang W - Nanoscale Res Lett (2014)

Bottom Line: Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance.The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment.High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.

ABSTRACT
We report a new semitransparent inverted polymer solar cell (PSC) with a structure of glass/FTO/nc-TiO2/P3HT:PCBM/MoO3/Ag/MoO3. Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance. The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment. The dependence of device performances on resistivity, light transmittance, and thickness of the MoO3/Ag/MoO3 film was investigated. High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

No MeSH data available.


Related in: MedlinePlus

Resistivity of ITO and FTO substrates after annealing treatment at different temperatures.T =20°C, 100°C, 200°C, 300°C, 400°C, and 500°C for 30 min. The inset shows the corresponding square resistance.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4202695&req=5

Figure 3: Resistivity of ITO and FTO substrates after annealing treatment at different temperatures.T =20°C, 100°C, 200°C, 300°C, 400°C, and 500°C for 30 min. The inset shows the corresponding square resistance.

Mentions: Here, we measured the resistivity of ITO and FTO substrates after annealing treatment at different temperatures (T =20°C, 100°C, 200°C, 300°C, 400°C, and 500°C) for 30 min. The curve is shown in Figure 3. For the ITO substrate, resistivity has a little change while annealing temperature is below 200°C and increases while annealing temperature is more than 300°C obviously. For the FTO substrate, resistivity has little change while annealing temperature is below 500°C. The inset in Figure 3 is the corresponding square resistance. For the ITO substrate, square resistance is 7.96 Ω/□ when annealing temperature is at 20°C and 40.65 Ω/□ at 500°C. It is about five times over. For the FTO substrate, square resistance is 13.48 Ω/□ when annealing temperature is at 20°C and 13.61 Ω/□ at 500°C which are of almost equal values. Because the oxygen holes as conductive carriers in the ITO decrease after 300°C annealing, the resistivity and sheet resistance increase. For FTO, this temperature is above 500°C. This is well matched with the causes.Figure 4 shows the transmittance spectra of ITO and FTO substrates after annealing treatment at 20°C and 500°C for 30 min and the absorption spectra of the P3HT:PCBM active layer. The absorption spectra range of the active layer is approximately 400 to 650 nm. In this range of wavelength, it can be seen that the transmittance of the FTO substrate is over 85% which is higher than that of the ITO substrate (between 75% and 85%). The active layer of the FTO substrate device can receive more sunlight than that of the ITO substrate device in a wavelength range of 400 to 650 nm. Meanwhile, the transmittance has been roughly unchanged after annealing at 500°C for the FTO substrate. For the ITO substrate, the transmittance has reduced and has a slight redshift. It might be caused by the reduction of oxygen vacancies.


Semitransparent inverted polymer solar cells employing a sol-gel-derived TiO2 electron-selective layer on FTO and MoO3/Ag/MoO3 transparent electrode.

Li F, Chen C, Tan F, Li C, Yue G, Shen L, Zhang W - Nanoscale Res Lett (2014)

Resistivity of ITO and FTO substrates after annealing treatment at different temperatures.T =20°C, 100°C, 200°C, 300°C, 400°C, and 500°C for 30 min. The inset shows the corresponding square resistance.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4202695&req=5

Figure 3: Resistivity of ITO and FTO substrates after annealing treatment at different temperatures.T =20°C, 100°C, 200°C, 300°C, 400°C, and 500°C for 30 min. The inset shows the corresponding square resistance.
Mentions: Here, we measured the resistivity of ITO and FTO substrates after annealing treatment at different temperatures (T =20°C, 100°C, 200°C, 300°C, 400°C, and 500°C) for 30 min. The curve is shown in Figure 3. For the ITO substrate, resistivity has a little change while annealing temperature is below 200°C and increases while annealing temperature is more than 300°C obviously. For the FTO substrate, resistivity has little change while annealing temperature is below 500°C. The inset in Figure 3 is the corresponding square resistance. For the ITO substrate, square resistance is 7.96 Ω/□ when annealing temperature is at 20°C and 40.65 Ω/□ at 500°C. It is about five times over. For the FTO substrate, square resistance is 13.48 Ω/□ when annealing temperature is at 20°C and 13.61 Ω/□ at 500°C which are of almost equal values. Because the oxygen holes as conductive carriers in the ITO decrease after 300°C annealing, the resistivity and sheet resistance increase. For FTO, this temperature is above 500°C. This is well matched with the causes.Figure 4 shows the transmittance spectra of ITO and FTO substrates after annealing treatment at 20°C and 500°C for 30 min and the absorption spectra of the P3HT:PCBM active layer. The absorption spectra range of the active layer is approximately 400 to 650 nm. In this range of wavelength, it can be seen that the transmittance of the FTO substrate is over 85% which is higher than that of the ITO substrate (between 75% and 85%). The active layer of the FTO substrate device can receive more sunlight than that of the ITO substrate device in a wavelength range of 400 to 650 nm. Meanwhile, the transmittance has been roughly unchanged after annealing at 500°C for the FTO substrate. For the ITO substrate, the transmittance has reduced and has a slight redshift. It might be caused by the reduction of oxygen vacancies.

Bottom Line: Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance.The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment.High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.

ABSTRACT
We report a new semitransparent inverted polymer solar cell (PSC) with a structure of glass/FTO/nc-TiO2/P3HT:PCBM/MoO3/Ag/MoO3. Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance. The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment. The dependence of device performances on resistivity, light transmittance, and thickness of the MoO3/Ag/MoO3 film was investigated. High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

No MeSH data available.


Related in: MedlinePlus