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Semitransparent inverted polymer solar cells employing a sol-gel-derived TiO2 electron-selective layer on FTO and MoO3/Ag/MoO3 transparent electrode.

Li F, Chen C, Tan F, Li C, Yue G, Shen L, Zhang W - Nanoscale Res Lett (2014)

Bottom Line: Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance.The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment.High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.

ABSTRACT
We report a new semitransparent inverted polymer solar cell (PSC) with a structure of glass/FTO/nc-TiO2/P3HT:PCBM/MoO3/Ag/MoO3. Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance. The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment. The dependence of device performances on resistivity, light transmittance, and thickness of the MoO3/Ag/MoO3 film was investigated. High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

No MeSH data available.


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J-V characteristics.J-V characteristics of device FTO/nc-TiO2/P3HT:PCBM/MoO3 (1 nm)/Ag (10 nm)/MoO3 (x nm) (x =20, 40, 60, and 80 nm) depending on the thickness of the MoO3 capping layer when illuminated from (a) the ITO side and (b) the MoO3/Ag/WO3 side.
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Figure 2: J-V characteristics.J-V characteristics of device FTO/nc-TiO2/P3HT:PCBM/MoO3 (1 nm)/Ag (10 nm)/MoO3 (x nm) (x =20, 40, 60, and 80 nm) depending on the thickness of the MoO3 capping layer when illuminated from (a) the ITO side and (b) the MoO3/Ag/WO3 side.

Mentions: As shown in Figure 2a, the J-V characteristic curves of the device FTO/nc-TiO2/P3HT:PCBM/MoO3 (1 nm)/Ag (10 nm)/MoO3 (x nm) (x =20, 40, 60, and 80 nm) under AM1.5G solar illumination of 100 mW/cm2 in ambient air when illuminated from the FTO side (bottom). The detailed results are given in Table 1. Compared with our previous results [19] (the device has a structure of ITO/nc-TiO2/P3HT:PCBM/MoO3 (1 nm)/Ag (10 nm)/MoO3 (x nm)), there is a similar variation that the PCE increases with increasing MoO3 thickness when illuminated from the FTO electrode. It is known that reflectance of the top electrode plays an important role in trapping light for the active layer to reabsorb. The reflectance peaks of the MoO3/Ag/MoO3 electrode are redshifted and would match better to the absorption spectra of the active layer (400 to 650 nm) when the thickness of the MoO3 capping layer increases [19,20]. As a result, high PCE is achieved for FTO substrate inverted PSCs, which shows about 75% increases compared to the reported ITO substrate device at different thicknesses of the MoO3 capping layer of the MoO3/Ag/MoO3 transparent electrode films. The PCE increases from 1.40% to 2.43%, 1.55% to 2.62%, 1.64% to 2.87%, and 1.76% to 3.09% at MoO3 capping layer thicknesses of 20, 40, 60, and 80 nm, respectively.


Semitransparent inverted polymer solar cells employing a sol-gel-derived TiO2 electron-selective layer on FTO and MoO3/Ag/MoO3 transparent electrode.

Li F, Chen C, Tan F, Li C, Yue G, Shen L, Zhang W - Nanoscale Res Lett (2014)

J-V characteristics.J-V characteristics of device FTO/nc-TiO2/P3HT:PCBM/MoO3 (1 nm)/Ag (10 nm)/MoO3 (x nm) (x =20, 40, 60, and 80 nm) depending on the thickness of the MoO3 capping layer when illuminated from (a) the ITO side and (b) the MoO3/Ag/WO3 side.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4202695&req=5

Figure 2: J-V characteristics.J-V characteristics of device FTO/nc-TiO2/P3HT:PCBM/MoO3 (1 nm)/Ag (10 nm)/MoO3 (x nm) (x =20, 40, 60, and 80 nm) depending on the thickness of the MoO3 capping layer when illuminated from (a) the ITO side and (b) the MoO3/Ag/WO3 side.
Mentions: As shown in Figure 2a, the J-V characteristic curves of the device FTO/nc-TiO2/P3HT:PCBM/MoO3 (1 nm)/Ag (10 nm)/MoO3 (x nm) (x =20, 40, 60, and 80 nm) under AM1.5G solar illumination of 100 mW/cm2 in ambient air when illuminated from the FTO side (bottom). The detailed results are given in Table 1. Compared with our previous results [19] (the device has a structure of ITO/nc-TiO2/P3HT:PCBM/MoO3 (1 nm)/Ag (10 nm)/MoO3 (x nm)), there is a similar variation that the PCE increases with increasing MoO3 thickness when illuminated from the FTO electrode. It is known that reflectance of the top electrode plays an important role in trapping light for the active layer to reabsorb. The reflectance peaks of the MoO3/Ag/MoO3 electrode are redshifted and would match better to the absorption spectra of the active layer (400 to 650 nm) when the thickness of the MoO3 capping layer increases [19,20]. As a result, high PCE is achieved for FTO substrate inverted PSCs, which shows about 75% increases compared to the reported ITO substrate device at different thicknesses of the MoO3 capping layer of the MoO3/Ag/MoO3 transparent electrode films. The PCE increases from 1.40% to 2.43%, 1.55% to 2.62%, 1.64% to 2.87%, and 1.76% to 3.09% at MoO3 capping layer thicknesses of 20, 40, 60, and 80 nm, respectively.

Bottom Line: Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance.The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment.High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.

ABSTRACT
We report a new semitransparent inverted polymer solar cell (PSC) with a structure of glass/FTO/nc-TiO2/P3HT:PCBM/MoO3/Ag/MoO3. Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance. The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment. The dependence of device performances on resistivity, light transmittance, and thickness of the MoO3/Ag/MoO3 film was investigated. High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

No MeSH data available.


Related in: MedlinePlus