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Semitransparent inverted polymer solar cells employing a sol-gel-derived TiO2 electron-selective layer on FTO and MoO3/Ag/MoO3 transparent electrode.

Li F, Chen C, Tan F, Li C, Yue G, Shen L, Zhang W - Nanoscale Res Lett (2014)

Bottom Line: Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance.The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment.High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.

ABSTRACT
We report a new semitransparent inverted polymer solar cell (PSC) with a structure of glass/FTO/nc-TiO2/P3HT:PCBM/MoO3/Ag/MoO3. Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance. The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment. The dependence of device performances on resistivity, light transmittance, and thickness of the MoO3/Ag/MoO3 film was investigated. High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

No MeSH data available.


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Schematic structure drawing of semitransparent inverted polymer solar cells.
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Figure 1: Schematic structure drawing of semitransparent inverted polymer solar cells.

Mentions: The photovoltaic device has a structure of FTO/nc-TiO2/P3HT:PCBM/MoO3/Ag/MoO3, (P3HT, Luminescence Technology Co., Palo Alto, CA, USA; 95 + % regioregular, electronic grade, PCBM, Luminescence Technology Co., Palo Alto, CA, USA, 99.5 + %) as shown schematically in Figure 1. The FTO conducting glass substrate (with a sheet resistance of <15 Ω/□) was pre-cleaned using acetone, ethanol, and deionized (DI) water for 15 min each. Anatase phase TiO2 thin films were prepared through a sol-gel method similar to our previous papers [20,21]. The procedure for the preparation of TiO2-sol involved the dissolution of 10 ml Ti(OC4H9)4 in 60 ml ethanol (C2H5OH), followed by adding 10 ml acetyl acetone. Then, a solution, composed of 30 ml C2H5OH, 2 ml DI water, and 2 ml hydrochloric acid (HCl) with a density of 0.28 mol/l, was added dropwise under vigorous stirring. The final mixture was stirred at room temperature for 24 h. Subsequently, TiO2-sol was spin cast on FTO conducting glass substrates at 3,000 rpm for 40 s. Then, the samples were annealed at 500°C for 30 min in a muffle furnace. The typical thickness of TiO2 is 25 nm. For the active layer, P3HT (used as received) was dissolved in 1,2-dichlorobenzene to produce an 18-mg/ml solution, followed by blending with PCBM (used as received) in 1:1 weight ratio [22]. The blend was stirred for 24 h in a nitrogen-filled glovebox before spin coating on top of the TiO2 film surface. Then, the samples were annealed at 150°C for 10 min on a hot plate in the glovebox. The typical film thickness of P3HT:PCBM was about 100 nm. Finally, 1 nm of MoO3, 10 nm of Ag, and x nm (x =20, 40, 60, and 80 nm) of MoO3 were thermally evaporated in sequence under high vacuum (5 × 10-4 Pa) without disrupting the vacuum. The deposition rate which was monitored with a quartz-oscillating thickness monitor (CRTM-9000, ULVAC, Methuen, MA, USA) was about 0.05 nm/s. The active area of the device was about 4 mm2.


Semitransparent inverted polymer solar cells employing a sol-gel-derived TiO2 electron-selective layer on FTO and MoO3/Ag/MoO3 transparent electrode.

Li F, Chen C, Tan F, Li C, Yue G, Shen L, Zhang W - Nanoscale Res Lett (2014)

Schematic structure drawing of semitransparent inverted polymer solar cells.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4202695&req=5

Figure 1: Schematic structure drawing of semitransparent inverted polymer solar cells.
Mentions: The photovoltaic device has a structure of FTO/nc-TiO2/P3HT:PCBM/MoO3/Ag/MoO3, (P3HT, Luminescence Technology Co., Palo Alto, CA, USA; 95 + % regioregular, electronic grade, PCBM, Luminescence Technology Co., Palo Alto, CA, USA, 99.5 + %) as shown schematically in Figure 1. The FTO conducting glass substrate (with a sheet resistance of <15 Ω/□) was pre-cleaned using acetone, ethanol, and deionized (DI) water for 15 min each. Anatase phase TiO2 thin films were prepared through a sol-gel method similar to our previous papers [20,21]. The procedure for the preparation of TiO2-sol involved the dissolution of 10 ml Ti(OC4H9)4 in 60 ml ethanol (C2H5OH), followed by adding 10 ml acetyl acetone. Then, a solution, composed of 30 ml C2H5OH, 2 ml DI water, and 2 ml hydrochloric acid (HCl) with a density of 0.28 mol/l, was added dropwise under vigorous stirring. The final mixture was stirred at room temperature for 24 h. Subsequently, TiO2-sol was spin cast on FTO conducting glass substrates at 3,000 rpm for 40 s. Then, the samples were annealed at 500°C for 30 min in a muffle furnace. The typical thickness of TiO2 is 25 nm. For the active layer, P3HT (used as received) was dissolved in 1,2-dichlorobenzene to produce an 18-mg/ml solution, followed by blending with PCBM (used as received) in 1:1 weight ratio [22]. The blend was stirred for 24 h in a nitrogen-filled glovebox before spin coating on top of the TiO2 film surface. Then, the samples were annealed at 150°C for 10 min on a hot plate in the glovebox. The typical film thickness of P3HT:PCBM was about 100 nm. Finally, 1 nm of MoO3, 10 nm of Ag, and x nm (x =20, 40, 60, and 80 nm) of MoO3 were thermally evaporated in sequence under high vacuum (5 × 10-4 Pa) without disrupting the vacuum. The deposition rate which was monitored with a quartz-oscillating thickness monitor (CRTM-9000, ULVAC, Methuen, MA, USA) was about 0.05 nm/s. The active area of the device was about 4 mm2.

Bottom Line: Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance.The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment.High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.

ABSTRACT
We report a new semitransparent inverted polymer solar cell (PSC) with a structure of glass/FTO/nc-TiO2/P3HT:PCBM/MoO3/Ag/MoO3. Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance. The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment. The dependence of device performances on resistivity, light transmittance, and thickness of the MoO3/Ag/MoO3 film was investigated. High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).

No MeSH data available.


Related in: MedlinePlus