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Enhanced electrical properties in sub-10-nm WO3 nanoflakes prepared via a two-step sol-gel-exfoliation method.

Zhuiykov S, Kats E - Nanoscale Res Lett (2014)

Bottom Line: The morphology and electrical properties of orthorhombic β-WO3 nanoflakes with thickness of ~7 to 9 nm were investigated at the nanoscale with a combination of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), current sensing force spectroscopy atomic force microscopy (CSFS-AFM, or PeakForce TUNA™), Fourier transform infra-red absorption spectroscopy (FTIR), linear sweep voltammetry (LSV) and Raman spectroscopy techniques.CSFS-AFM analysis established good correlation between the topography of the developed nanostructures and various features of WO3 nanoflakes synthesized via a two-step sol-gel-exfoliation method.It was determined that β-WO3 nanoflakes annealed at 550°C possess distinguished and exceptional thickness-dependent properties in comparison with the bulk, micro and nanostructured WO3 synthesized at alternative temperatures.

View Article: PubMed Central - HTML - PubMed

Affiliation: Materials Science and Engineering Division, CSIRO, 37 Graham Road, Highett, VIC 3190, Australia.

ABSTRACT
The morphology and electrical properties of orthorhombic β-WO3 nanoflakes with thickness of ~7 to 9 nm were investigated at the nanoscale with a combination of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), current sensing force spectroscopy atomic force microscopy (CSFS-AFM, or PeakForce TUNA™), Fourier transform infra-red absorption spectroscopy (FTIR), linear sweep voltammetry (LSV) and Raman spectroscopy techniques. CSFS-AFM analysis established good correlation between the topography of the developed nanostructures and various features of WO3 nanoflakes synthesized via a two-step sol-gel-exfoliation method. It was determined that β-WO3 nanoflakes annealed at 550°C possess distinguished and exceptional thickness-dependent properties in comparison with the bulk, micro and nanostructured WO3 synthesized at alternative temperatures.

No MeSH data available.


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XRD patterns of the WO3 thin films sintered on Au-covered Si substrate at temperature of 550°C.
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Figure 2: XRD patterns of the WO3 thin films sintered on Au-covered Si substrate at temperature of 550°C.

Mentions: Figure 2 exhibits the XRD patterns for sol-gel prepared WO3 nanostructures, which were subsequntly sintered at 550°C. The intense reflection peaks were narrow and sharp indicating that WO3 is well crystallized. All reflections were indexed to orthorhombic β-WO3 phase (JCPDS card No. 20-1324 with space group P and the following lattice parameters: a = 7.384 Å, b = 7.512 Å, c = 3.864 Å). The results obtained were similar to the previously published data for orthorhombic β-WO3[3,32,33]. Generally, the orthorhombic phase of WO3 is stable in the temperature range of 330 to 740°C [34,35]. No impurities in the developed thin films were detected.


Enhanced electrical properties in sub-10-nm WO3 nanoflakes prepared via a two-step sol-gel-exfoliation method.

Zhuiykov S, Kats E - Nanoscale Res Lett (2014)

XRD patterns of the WO3 thin films sintered on Au-covered Si substrate at temperature of 550°C.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4150682&req=5

Figure 2: XRD patterns of the WO3 thin films sintered on Au-covered Si substrate at temperature of 550°C.
Mentions: Figure 2 exhibits the XRD patterns for sol-gel prepared WO3 nanostructures, which were subsequntly sintered at 550°C. The intense reflection peaks were narrow and sharp indicating that WO3 is well crystallized. All reflections were indexed to orthorhombic β-WO3 phase (JCPDS card No. 20-1324 with space group P and the following lattice parameters: a = 7.384 Å, b = 7.512 Å, c = 3.864 Å). The results obtained were similar to the previously published data for orthorhombic β-WO3[3,32,33]. Generally, the orthorhombic phase of WO3 is stable in the temperature range of 330 to 740°C [34,35]. No impurities in the developed thin films were detected.

Bottom Line: The morphology and electrical properties of orthorhombic β-WO3 nanoflakes with thickness of ~7 to 9 nm were investigated at the nanoscale with a combination of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), current sensing force spectroscopy atomic force microscopy (CSFS-AFM, or PeakForce TUNA™), Fourier transform infra-red absorption spectroscopy (FTIR), linear sweep voltammetry (LSV) and Raman spectroscopy techniques.CSFS-AFM analysis established good correlation between the topography of the developed nanostructures and various features of WO3 nanoflakes synthesized via a two-step sol-gel-exfoliation method.It was determined that β-WO3 nanoflakes annealed at 550°C possess distinguished and exceptional thickness-dependent properties in comparison with the bulk, micro and nanostructured WO3 synthesized at alternative temperatures.

View Article: PubMed Central - HTML - PubMed

Affiliation: Materials Science and Engineering Division, CSIRO, 37 Graham Road, Highett, VIC 3190, Australia.

ABSTRACT
The morphology and electrical properties of orthorhombic β-WO3 nanoflakes with thickness of ~7 to 9 nm were investigated at the nanoscale with a combination of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), current sensing force spectroscopy atomic force microscopy (CSFS-AFM, or PeakForce TUNA™), Fourier transform infra-red absorption spectroscopy (FTIR), linear sweep voltammetry (LSV) and Raman spectroscopy techniques. CSFS-AFM analysis established good correlation between the topography of the developed nanostructures and various features of WO3 nanoflakes synthesized via a two-step sol-gel-exfoliation method. It was determined that β-WO3 nanoflakes annealed at 550°C possess distinguished and exceptional thickness-dependent properties in comparison with the bulk, micro and nanostructured WO3 synthesized at alternative temperatures.

No MeSH data available.


Related in: MedlinePlus