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ZnO-porous silicon nanocomposite for possible memristive device fabrication.

Martínez L, Ocampo O, Kumar Y, Agarwal V - Nanoscale Res Lett (2014)

Bottom Line: Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported.Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance.The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

View Article: PubMed Central - HTML - PubMed

Affiliation: Center for Engineering and Applied Sciences (CIICAp-UAEM), Av. Universidad 1001. Col. Chamilpa, Cuernavaca, Morelos 62209, Mexico.

ABSTRACT
Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance. Morphological and optical properties are investigated using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

No MeSH data available.


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Current-voltage ( I - V ) characterization. (a) Schematic of lateral (A) and transversal (B) measurements for the same sample. (b) ZnO over crystalline Si before and after annealing. (c) ZnO-mesoPS composite after annealing. Left- and right-hand side figures correspond to the configurations A (lateral) and B (transversal), respectively.
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Figure 4: Current-voltage ( I - V ) characterization. (a) Schematic of lateral (A) and transversal (B) measurements for the same sample. (b) ZnO over crystalline Si before and after annealing. (c) ZnO-mesoPS composite after annealing. Left- and right-hand side figures correspond to the configurations A (lateral) and B (transversal), respectively.

Mentions: Figure 4a shows schematics of lateral (A) and transversal (B) configurations of the electrodes for current-voltage (I-V) characterization. Two types of configurations (lateral and transversal) for I-V characterization were analyzed in order to provide more information about the oxygen vacancies' diffusion paths. ZnO deposited on crystalline silicon and then annealed at 700°C was also characterized as a reference, before and after annealing (Figure 4b). Results illustrated in Figure 4b reveal a simple resistor-like behavior in both cases. Annealed ZnO-mesoPS composites were tested for memristive response for both configurations, and the current-voltage curves of our proposed device after annealing (Figure 4c) reveal the zero-crossing pinched hysteresis loop characteristic of memristive devices [2,28] in both cases. By analyzing the results in Figure 4c, we can clearly see a better curve symmetry for the lateral configuration (A), although some asymmetry is evident for both of them. Like a typical memristive device, the device state (Roff to Ron) remains unaffected before a certain threshold voltage. In particular, for the case of lateral configuration, the memristive switching ratio from the high resistance state (HRS) to the low resistance state (LRS) at 7 V is 1.72 for the positive bias and 3.1 for the negative bias, which indicates a bipolar resistive switching.


ZnO-porous silicon nanocomposite for possible memristive device fabrication.

Martínez L, Ocampo O, Kumar Y, Agarwal V - Nanoscale Res Lett (2014)

Current-voltage ( I - V ) characterization. (a) Schematic of lateral (A) and transversal (B) measurements for the same sample. (b) ZnO over crystalline Si before and after annealing. (c) ZnO-mesoPS composite after annealing. Left- and right-hand side figures correspond to the configurations A (lateral) and B (transversal), respectively.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4150548&req=5

Figure 4: Current-voltage ( I - V ) characterization. (a) Schematic of lateral (A) and transversal (B) measurements for the same sample. (b) ZnO over crystalline Si before and after annealing. (c) ZnO-mesoPS composite after annealing. Left- and right-hand side figures correspond to the configurations A (lateral) and B (transversal), respectively.
Mentions: Figure 4a shows schematics of lateral (A) and transversal (B) configurations of the electrodes for current-voltage (I-V) characterization. Two types of configurations (lateral and transversal) for I-V characterization were analyzed in order to provide more information about the oxygen vacancies' diffusion paths. ZnO deposited on crystalline silicon and then annealed at 700°C was also characterized as a reference, before and after annealing (Figure 4b). Results illustrated in Figure 4b reveal a simple resistor-like behavior in both cases. Annealed ZnO-mesoPS composites were tested for memristive response for both configurations, and the current-voltage curves of our proposed device after annealing (Figure 4c) reveal the zero-crossing pinched hysteresis loop characteristic of memristive devices [2,28] in both cases. By analyzing the results in Figure 4c, we can clearly see a better curve symmetry for the lateral configuration (A), although some asymmetry is evident for both of them. Like a typical memristive device, the device state (Roff to Ron) remains unaffected before a certain threshold voltage. In particular, for the case of lateral configuration, the memristive switching ratio from the high resistance state (HRS) to the low resistance state (LRS) at 7 V is 1.72 for the positive bias and 3.1 for the negative bias, which indicates a bipolar resistive switching.

Bottom Line: Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported.Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance.The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

View Article: PubMed Central - HTML - PubMed

Affiliation: Center for Engineering and Applied Sciences (CIICAp-UAEM), Av. Universidad 1001. Col. Chamilpa, Cuernavaca, Morelos 62209, Mexico.

ABSTRACT
Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance. Morphological and optical properties are investigated using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

No MeSH data available.


Related in: MedlinePlus