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ZnO-porous silicon nanocomposite for possible memristive device fabrication.

Martínez L, Ocampo O, Kumar Y, Agarwal V - Nanoscale Res Lett (2014)

Bottom Line: Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported.Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance.The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

View Article: PubMed Central - HTML - PubMed

Affiliation: Center for Engineering and Applied Sciences (CIICAp-UAEM), Av. Universidad 1001. Col. Chamilpa, Cuernavaca, Morelos 62209, Mexico.

ABSTRACT
Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance. Morphological and optical properties are investigated using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

No MeSH data available.


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SEM micrographs. SEM micrographs show the top view of (a) PS substrate S1, (c) ZnO/PS composites ZS1, and (e) ZnO/PS composites after annealing at 700°C. (b, d, f): Respective cross-sectional view of each sample.
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Figure 2: SEM micrographs. SEM micrographs show the top view of (a) PS substrate S1, (c) ZnO/PS composites ZS1, and (e) ZnO/PS composites after annealing at 700°C. (b, d, f): Respective cross-sectional view of each sample.

Mentions: Figure 2a shows the SEM image of the surface of the PS nanostructure (S1) with irregular distribution of pores. The average pore size is 20 nm and the layer thickness d1 = 100 nm and d2 = 80 nm as illustrated in Figure 2b. Figure 2c,d shows the top and cross-sectional SEM images of the ZnO thin film on the porous silicon substrate sample (ZS1). We can see that the ZnO thin film was closely connected with the PS substrate and no clearance can be found in the interface. This may be due to the partial filling of the ZnO thin film in the pores. The ZnO film obtained after annealing at 700°C (corresponding to the sample ZS1-A) reveals the formation of labyrinth patterns, and the composite is composed of numerous spherical ZnO nanocrystals emerging in a network of pores as Figure 2e,f shows. The labyrinth patterns may be caused by the ZnO film, deposited on the PS substrate acting as a transparent coating on top of the porous structure. The air present in the pores is sealed up, and during the heating process of the substrate at 700°C, it starts to escape resulting in film stress and the formation of the crests, therefore the labyrinth patterns [20].


ZnO-porous silicon nanocomposite for possible memristive device fabrication.

Martínez L, Ocampo O, Kumar Y, Agarwal V - Nanoscale Res Lett (2014)

SEM micrographs. SEM micrographs show the top view of (a) PS substrate S1, (c) ZnO/PS composites ZS1, and (e) ZnO/PS composites after annealing at 700°C. (b, d, f): Respective cross-sectional view of each sample.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
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getmorefigures.php?uid=PMC4150548&req=5

Figure 2: SEM micrographs. SEM micrographs show the top view of (a) PS substrate S1, (c) ZnO/PS composites ZS1, and (e) ZnO/PS composites after annealing at 700°C. (b, d, f): Respective cross-sectional view of each sample.
Mentions: Figure 2a shows the SEM image of the surface of the PS nanostructure (S1) with irregular distribution of pores. The average pore size is 20 nm and the layer thickness d1 = 100 nm and d2 = 80 nm as illustrated in Figure 2b. Figure 2c,d shows the top and cross-sectional SEM images of the ZnO thin film on the porous silicon substrate sample (ZS1). We can see that the ZnO thin film was closely connected with the PS substrate and no clearance can be found in the interface. This may be due to the partial filling of the ZnO thin film in the pores. The ZnO film obtained after annealing at 700°C (corresponding to the sample ZS1-A) reveals the formation of labyrinth patterns, and the composite is composed of numerous spherical ZnO nanocrystals emerging in a network of pores as Figure 2e,f shows. The labyrinth patterns may be caused by the ZnO film, deposited on the PS substrate acting as a transparent coating on top of the porous structure. The air present in the pores is sealed up, and during the heating process of the substrate at 700°C, it starts to escape resulting in film stress and the formation of the crests, therefore the labyrinth patterns [20].

Bottom Line: Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported.Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance.The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

View Article: PubMed Central - HTML - PubMed

Affiliation: Center for Engineering and Applied Sciences (CIICAp-UAEM), Av. Universidad 1001. Col. Chamilpa, Cuernavaca, Morelos 62209, Mexico.

ABSTRACT
Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance. Morphological and optical properties are investigated using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

No MeSH data available.


Related in: MedlinePlus