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ZnO-porous silicon nanocomposite for possible memristive device fabrication.

Martínez L, Ocampo O, Kumar Y, Agarwal V - Nanoscale Res Lett (2014)

Bottom Line: Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported.Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance.The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

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Affiliation: Center for Engineering and Applied Sciences (CIICAp-UAEM), Av. Universidad 1001. Col. Chamilpa, Cuernavaca, Morelos 62209, Mexico.

ABSTRACT
Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance. Morphological and optical properties are investigated using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

No MeSH data available.


Related in: MedlinePlus

Tauc plot and X-ray diffraction pattern. (a) Tauc plot: optical absorption coefficient (αhv)2 vs. phonon energy (hv) of the ZnO thin film deposited on the Corning glass substrate. The inset shows the optical transmittance of the ZnO thin film on the Corning substrate. (b) X-ray diffraction pattern of the ZnO film after annealing at 700°C.
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Figure 1: Tauc plot and X-ray diffraction pattern. (a) Tauc plot: optical absorption coefficient (αhv)2 vs. phonon energy (hv) of the ZnO thin film deposited on the Corning glass substrate. The inset shows the optical transmittance of the ZnO thin film on the Corning substrate. (b) X-ray diffraction pattern of the ZnO film after annealing at 700°C.

Mentions: To check the quality of the ZnO film, its transmittance properties were analyzed as shown in (Figure 1) [18]. The absorption coefficient (α) is obtained using the following equation:


ZnO-porous silicon nanocomposite for possible memristive device fabrication.

Martínez L, Ocampo O, Kumar Y, Agarwal V - Nanoscale Res Lett (2014)

Tauc plot and X-ray diffraction pattern. (a) Tauc plot: optical absorption coefficient (αhv)2 vs. phonon energy (hv) of the ZnO thin film deposited on the Corning glass substrate. The inset shows the optical transmittance of the ZnO thin film on the Corning substrate. (b) X-ray diffraction pattern of the ZnO film after annealing at 700°C.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4150548&req=5

Figure 1: Tauc plot and X-ray diffraction pattern. (a) Tauc plot: optical absorption coefficient (αhv)2 vs. phonon energy (hv) of the ZnO thin film deposited on the Corning glass substrate. The inset shows the optical transmittance of the ZnO thin film on the Corning substrate. (b) X-ray diffraction pattern of the ZnO film after annealing at 700°C.
Mentions: To check the quality of the ZnO film, its transmittance properties were analyzed as shown in (Figure 1) [18]. The absorption coefficient (α) is obtained using the following equation:

Bottom Line: Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported.Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance.The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

View Article: PubMed Central - HTML - PubMed

Affiliation: Center for Engineering and Applied Sciences (CIICAp-UAEM), Av. Universidad 1001. Col. Chamilpa, Cuernavaca, Morelos 62209, Mexico.

ABSTRACT
Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance. Morphological and optical properties are investigated using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.

No MeSH data available.


Related in: MedlinePlus