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Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation.

Tan GH, Sidek RM, Ramiah H, Chong WK, Lioe de X - ScientificWorldJournal (2014)

Bottom Line: This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application.The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB.The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm(2).

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Electronic Engineering, Universiti Putra Malaysia, 43400 Serdang, Malaysia ; Department of Electrical and Electronic Engineering, Segi University, 47810 Petaling Jaya, Selangor, Malaysia.

ABSTRACT
This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm(2).

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A schematic view of the proposed mixer.
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fig2: A schematic view of the proposed mixer.

Mentions: Figure 2 shows that the proposed mixer consists of a RF transconductance stage (M1-M2), a PMOS-based LO switching input (M3–M6), a NMOS-based current bleeding stage (M7-M8), and the output load (RL1-CL1 and RL2-CL2). Inductors Ld1 and Ld2 act as a RF choke in alleviating the RF signal leakage into the voltage supply, VDD. The RF frequency is mixed with the LO frequency at node X1 and X2. The differential output current, neglecting the higher order spurs, can be derived as follows:(1)iIF=2π·gm1,2 ·vRF[sin(ωRF−ωLO)t−sin(ωRF+  ωLO)t],where gm1,2 is the transconductance for M1 and M2 and vRF is the input RF signal, while ωRF and ωLO are the RF and LO frequency, respectively. At the IF output, the combination of RL1-CL1 and RL2-CL2 forms a low pass filter (LPF), which filters out the high-order spurs at the output such as the upconverted frequency component sin(ωRF + ωLO).


Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation.

Tan GH, Sidek RM, Ramiah H, Chong WK, Lioe de X - ScientificWorldJournal (2014)

A schematic view of the proposed mixer.
© Copyright Policy - open-access
Related In: Results  -  Collection

Show All Figures
getmorefigures.php?uid=PMC4150493&req=5

fig2: A schematic view of the proposed mixer.
Mentions: Figure 2 shows that the proposed mixer consists of a RF transconductance stage (M1-M2), a PMOS-based LO switching input (M3–M6), a NMOS-based current bleeding stage (M7-M8), and the output load (RL1-CL1 and RL2-CL2). Inductors Ld1 and Ld2 act as a RF choke in alleviating the RF signal leakage into the voltage supply, VDD. The RF frequency is mixed with the LO frequency at node X1 and X2. The differential output current, neglecting the higher order spurs, can be derived as follows:(1)iIF=2π·gm1,2 ·vRF[sin(ωRF−ωLO)t−sin(ωRF+  ωLO)t],where gm1,2 is the transconductance for M1 and M2 and vRF is the input RF signal, while ωRF and ωLO are the RF and LO frequency, respectively. At the IF output, the combination of RL1-CL1 and RL2-CL2 forms a low pass filter (LPF), which filters out the high-order spurs at the output such as the upconverted frequency component sin(ωRF + ωLO).

Bottom Line: This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application.The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB.The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm(2).

View Article: PubMed Central - PubMed

Affiliation: Department of Electrical and Electronic Engineering, Universiti Putra Malaysia, 43400 Serdang, Malaysia ; Department of Electrical and Electronic Engineering, Segi University, 47810 Petaling Jaya, Selangor, Malaysia.

ABSTRACT
This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm(2).

Show MeSH
Related in: MedlinePlus