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Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD.

Zhang J, Li S, Xiong H, Tian W, Li Y, Fang Y, Wu Z, Dai J, Xu J, Li X, Chen C - Nanoscale Res Lett (2014)

Bottom Line: With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD).Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2).X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN.

View Article: PubMed Central - HTML - PubMed

Affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

ABSTRACT
With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2). X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN.

No MeSH data available.


AFM images of sample B (a) and diameter distributions of GaN QDs (b). (a) Scan area 10 × 10 μm2; (b) Analyzed from the AFM images of sample B. Inset is the 3D image of obtained GaN QDs.
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Figure 3: AFM images of sample B (a) and diameter distributions of GaN QDs (b). (a) Scan area 10 × 10 μm2; (b) Analyzed from the AFM images of sample B. Inset is the 3D image of obtained GaN QDs.

Mentions: To further investigate the size distribution of the obtained GaN QDs, the AFM images of sample B with scan area 10 × 10 μm2 is shown in Figure 3a. The QDs have a low density of approximately 2.4 × 108 cm-2 and no obvious big dots are observed, showing the good uniformity. Figure 3b illustrates the diameter histograms obtained by the AFM analysis of Figure 3a. It is clear that the most probable diameter is in the range from 70 to 80 nm. The inset of Figure 3b shows a detailed 3D AFM image of the QDs in 1 × 1 μm2, indicating the similar well-formed dot structure. According to the results above, the obtained GaN QDs have a good size distribution. To the best of our knowledge, this is the first report of low-density GaN QDs fabricated via GaN thermal decomposition in MOCVD.


Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD.

Zhang J, Li S, Xiong H, Tian W, Li Y, Fang Y, Wu Z, Dai J, Xu J, Li X, Chen C - Nanoscale Res Lett (2014)

AFM images of sample B (a) and diameter distributions of GaN QDs (b). (a) Scan area 10 × 10 μm2; (b) Analyzed from the AFM images of sample B. Inset is the 3D image of obtained GaN QDs.
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Related In: Results  -  Collection

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Figure 3: AFM images of sample B (a) and diameter distributions of GaN QDs (b). (a) Scan area 10 × 10 μm2; (b) Analyzed from the AFM images of sample B. Inset is the 3D image of obtained GaN QDs.
Mentions: To further investigate the size distribution of the obtained GaN QDs, the AFM images of sample B with scan area 10 × 10 μm2 is shown in Figure 3a. The QDs have a low density of approximately 2.4 × 108 cm-2 and no obvious big dots are observed, showing the good uniformity. Figure 3b illustrates the diameter histograms obtained by the AFM analysis of Figure 3a. It is clear that the most probable diameter is in the range from 70 to 80 nm. The inset of Figure 3b shows a detailed 3D AFM image of the QDs in 1 × 1 μm2, indicating the similar well-formed dot structure. According to the results above, the obtained GaN QDs have a good size distribution. To the best of our knowledge, this is the first report of low-density GaN QDs fabricated via GaN thermal decomposition in MOCVD.

Bottom Line: With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD).Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2).X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN.

View Article: PubMed Central - HTML - PubMed

Affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

ABSTRACT
With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2). X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN.

No MeSH data available.