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Controlled growth of 1D and 2D ZnO nanostructures on 4H-SiC using Au catalyst.

Dahiya AS, Opoku C, Alquier D, Poulin-Vittrant G, Cayrel F, Graton O, Hue LP, Camara N - Nanoscale Res Lett (2014)

Bottom Line: A perfect control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic device/systems.From experimental observations, we have ascribed the growth mechanisms of the different ZnO nanostructures to be a combination of catalytic-assisted and non-catalytic-assisted vapor-liquid-solid (VLS) processes.We have also found that the different ZnO nanoarchitectures' material evolution is governed by a Zn cluster drift effects on the SiC surface mainly driven by growth temperature.

View Article: PubMed Central - HTML - PubMed

Affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347, 16 rue Pierre et Marie Curie, Tours 37071, France.

ABSTRACT
A perfect control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic device/systems. In this article, we demonstrate the growth of various ZnO-derived nanostructures, including well-ordered arrays of high aspect ratio single crystalline nanowires with preferred growth direction along the [0001] axis, nanowalls, and hybrid nanowire-nanowall structures. The growths of the various ZnO nanostructures have been carried out on SiC substrates in a horizontal furnace, using Au thin film as catalyst. From experimental observations, we have ascribed the growth mechanisms of the different ZnO nanostructures to be a combination of catalytic-assisted and non-catalytic-assisted vapor-liquid-solid (VLS) processes. We have also found that the different ZnO nanoarchitectures' material evolution is governed by a Zn cluster drift effects on the SiC surface mainly driven by growth temperature. Au thin film thickness, growth time, and temperature are the parameters to optimize in order to obtain the different ZnO nanoarchitectures.

No MeSH data available.


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High-magnification STEM image of ZnO NWLs and the area scanned for EDX analysis.
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Figure 5: High-magnification STEM image of ZnO NWLs and the area scanned for EDX analysis.

Mentions: As mentioned previously, in the VLS process, the location of metal catalyst after the growth is essential for the determination of the growth process. To determine the exact position of the Au nanoparticles, EDX experiments were carried out on both NWs and NWLs. Figure 5 shows an example of high-magnification cross-section STEM image of ZnO NWLs and the area scan used for the EDX analysis. From this figure, it can be seen that the Au nanoparticles are located close to the ZnO-SiC interface. The presence of Au nanoparticle at the ZnO/substrate interface is well documented in the literature [10,15-17,21]. However, the exact mechanism responsible for the growth process of such diverse nanostructures is not fully understood. The observation of the Au seed particle at the ZnO/substrate interface would suggest that the growth of the nanostructures is due to the non-catalytic-assisted VLS. However, we will show in later sections that the apparent location of the Au seed particles can also be due to a combination of catalytic-assisted and non-catalytic-assisted VLS processes [15].


Controlled growth of 1D and 2D ZnO nanostructures on 4H-SiC using Au catalyst.

Dahiya AS, Opoku C, Alquier D, Poulin-Vittrant G, Cayrel F, Graton O, Hue LP, Camara N - Nanoscale Res Lett (2014)

High-magnification STEM image of ZnO NWLs and the area scanned for EDX analysis.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4127525&req=5

Figure 5: High-magnification STEM image of ZnO NWLs and the area scanned for EDX analysis.
Mentions: As mentioned previously, in the VLS process, the location of metal catalyst after the growth is essential for the determination of the growth process. To determine the exact position of the Au nanoparticles, EDX experiments were carried out on both NWs and NWLs. Figure 5 shows an example of high-magnification cross-section STEM image of ZnO NWLs and the area scan used for the EDX analysis. From this figure, it can be seen that the Au nanoparticles are located close to the ZnO-SiC interface. The presence of Au nanoparticle at the ZnO/substrate interface is well documented in the literature [10,15-17,21]. However, the exact mechanism responsible for the growth process of such diverse nanostructures is not fully understood. The observation of the Au seed particle at the ZnO/substrate interface would suggest that the growth of the nanostructures is due to the non-catalytic-assisted VLS. However, we will show in later sections that the apparent location of the Au seed particles can also be due to a combination of catalytic-assisted and non-catalytic-assisted VLS processes [15].

Bottom Line: A perfect control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic device/systems.From experimental observations, we have ascribed the growth mechanisms of the different ZnO nanostructures to be a combination of catalytic-assisted and non-catalytic-assisted vapor-liquid-solid (VLS) processes.We have also found that the different ZnO nanoarchitectures' material evolution is governed by a Zn cluster drift effects on the SiC surface mainly driven by growth temperature.

View Article: PubMed Central - HTML - PubMed

Affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347, 16 rue Pierre et Marie Curie, Tours 37071, France.

ABSTRACT
A perfect control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic device/systems. In this article, we demonstrate the growth of various ZnO-derived nanostructures, including well-ordered arrays of high aspect ratio single crystalline nanowires with preferred growth direction along the [0001] axis, nanowalls, and hybrid nanowire-nanowall structures. The growths of the various ZnO nanostructures have been carried out on SiC substrates in a horizontal furnace, using Au thin film as catalyst. From experimental observations, we have ascribed the growth mechanisms of the different ZnO nanostructures to be a combination of catalytic-assisted and non-catalytic-assisted vapor-liquid-solid (VLS) processes. We have also found that the different ZnO nanoarchitectures' material evolution is governed by a Zn cluster drift effects on the SiC surface mainly driven by growth temperature. Au thin film thickness, growth time, and temperature are the parameters to optimize in order to obtain the different ZnO nanoarchitectures.

No MeSH data available.


Related in: MedlinePlus